Datasheet > BU1506DX

BU1506DX

更新时间： 2024-10-01 06:44:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	205K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BU1506DX 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU1506DX

DESCRIPTION

·With TO-220F package

·High voltage

·High speed switching

·Built-in damper diode.

APPLICATIONS

·For use in horizontal deflection circuits

of colour TV receivers.

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

7.5

I_CM

Collector current-peak

Base current

I_B

I_BM

Base current-peak

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

150

-40~150

T_stg

ꢀ

12 3

中文翻译

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