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BTS723GWXUMA1 PDF预览

BTS723GWXUMA1

更新时间： 2024-01-24 21:28:04
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动光电二极管接口集成电路
页数 文件大小 规格书
17页 283K
描述
Buffer/Inverter Based Peripheral Driver, 4.2A, PDSO14, GREEN, PLASTIC, SOP-14

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BTS723GWXUMA1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP,针数：14
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：26 weeks
风险等级：1.58内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码：R-PDSO-G14
JESD-609代码：e3长度：8.75 mm
湿度敏感等级：3功能数量：2
端子数量：14输出电流流向：SINK
标称输出峰值电流：4.2 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压：58 V最小供电电压：7 V
标称供电电压：24 V表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：95 µs
接通时间：55 µs宽度：4 mm
Base Number Matches：1

BTS723GWXUMA1 数据手册

 浏览型号BTS723GWXUMA1的Datasheet PDF文件第4页浏览型号BTS723GWXUMA1的Datasheet PDF文件第5页浏览型号BTS723GWXUMA1的Datasheet PDF文件第6页浏览型号BTS723GWXUMA1的Datasheet PDF文件第8页浏览型号BTS723GWXUMA1的Datasheet PDF文件第9页浏览型号BTS723GWXUMA1的Datasheet PDF文件第10页 
Smart High-Side Power Switch  
BTS723GW  
Parameter and Conditions, each of the two channels  
Symbol  
Values  
Unit  
at Tj = -40...+150°C, V = 24 V unless otherwise specified  
bb  
min  
typ  
Max  
Protection Functions14)  
Current limit, (see timing diagrams, page 13)  
j =-40°C: IL(lim)  
--  
--  
5
10  
9
8
12  
--  
--  
A
T
j =25°C:  
T
j =+150°C:  
T
)
Repetitive short circuit current limit 15  
Tj = Tjt  
,
each channel IL(SCr)  
two parallel channels  
--  
--  
8
8
--  
--  
A
(see timing diagrams, page 13)  
Initial short circuit shutdown time  
Tj,start =25°C: toff(SC)  
--  
2
--  
ms  
(see timing diagrams on page 13)  
Output clamp (inductive load switch off)16)  
at V  
ON(CL)  
= V - V  
bb OUT  
, I = 1 A  
VON(CL)  
Tjt  
∆Tjt  
59  
150  
--  
64  
--  
10  
70  
--  
--  
V
°C  
K
L
Thermal overload trip temperature  
Thermal hysteresis  
Reverse Battery  
)
Reverse battery voltage 17  
-Vbb  
-VON  
--  
--  
--  
650  
24  
--  
V
mV  
18)  
Drain-source diode voltage (V > V  
)
out  
bb  
L =-3.0A, T  
j
=+150°C  
I
)
Inverse current 19  
)
GND current in case of 3A inverse current 20  
IGND(inv cur)  
--  
--  
15  
mA  
14)  
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not  
designed for continuous repetitive operation.  
15  
) not subject to production test, specified by design  
16)  
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest  
V
ON(CL)  
17)  
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source  
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating  
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active  
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and  
circuit page 10).  
18  
) not subject to production test, specified by design  
) not subject to production test, specified by design  
19  
20)  
In case of an inverse current of 3A the both status outputs must not be disturbed.  
The neighbour channel can be switched normally; not all paramters lay within the range of the spec  
Please note, that in case of an inverse current no protection function is active. The power dissipation is  
higher compared to normal operation in forward mode due to the voltage drop across the drain-source diode  
Data Sheet  
7
V1.1, 2007-09-25  
1...45678910...17

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