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BTS550PE3146HKSA1 PDF预览

BTS550PE3146HKSA1

更新时间: 2024-01-18 16:25:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网驱动接口集成电路
页数 文件大小 规格书
15页 285K
描述
Buffer/Inverter Based Peripheral Driver, 97A, MOS, PSFM5,

BTS550PE3146HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:8.62
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSFM-T5JESD-609代码:e3
功能数量:1端子数量:5
输出电流流向:SINK标称输出峰值电流:97 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
技术:MOS端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:200 µs
接通时间:400 µsBase Number Matches:1

BTS550PE3146HKSA1 数据手册

 浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第1页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第3页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第4页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第5页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第6页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第7页 
Data Sheet BTS550  
Pin  
Symbol  
Function  
Output to the load. The pins 1 and 5 must be shorted with each other  
especially in high current applications!  
1
OUT  
3)  
2
3
IN  
Input, activates the power switch in case of short to ground  
Positive power supply voltage, the tab is electrically connected to this pin.  
V
bb  
In high current applications the tab should be used for the V connection  
bb  
4)  
instead of this pin .  
Diagnostic feedback providing a sense current proportional to the load  
current; zero current on failure (see Truth Table on page 7)  
4
5
IS  
OUT  
Output to the load. The pins 1 and 5 must be shorted with each other  
3)  
especially in high current applications!  
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Supply voltage (see page 4 and 5)  
Symbol  
Vbb  
Vbb  
Values  
Unit  
V
40  
34  
Supply voltage for short circuit protection,  
Tj,start =-40°C ...+150°C: (EAS limitation see diagram on page 10)  
V
Load current (short circuit current, see page 5)  
Load dump protection VLoadDump =UA +Vs, UA =13.5V  
RI5) =2, RL =0.54, td =200ms,  
IN, IS= open or grounded  
IL  
self-limited  
80  
A
V
6)  
VLoad dump  
Operating temperature range  
Storage temperature range  
Power dissipation (DC), TC 25 °C  
Tj  
Tstg  
Ptot  
-40 ...+150  
-55 ...+150  
°C  
W
360  
Inductive load switch-off energy dissipation, single pulse  
Vbb =12V, Tj,start =150°C, TC =150°C const.,  
IL = 20 A, ZL = 15mH, 0, see diagram on page 10  
Electrostatic discharge capability (ESD)  
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD  
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ  
3
4
J
EAS  
VESD  
kV  
Current through input pin (DC)  
Current through current sense status pin (DC)  
see internal circuit diagrams on page 8 and 9  
IIN  
IIS  
+15, -250  
+15, -250  
mA  
3)  
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability  
and decrease the current sense accuracy  
Otherwise add up to 0.5 m(depending on used length of the pin) to the RON if the pin is used instead of the  
tab.  
4)  
5)  
6)  
R = internal resistance of the load dump test pulse generator.  
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.  
I
Infineon Technologies AG  
2
2010-June-01  

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