5秒后页面跳转
BTS550PE3146HKSA1 PDF预览

BTS550PE3146HKSA1

更新时间: 2024-02-21 04:07:36
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网驱动接口集成电路
页数 文件大小 规格书
15页 285K
描述
Buffer/Inverter Based Peripheral Driver, 97A, MOS, PSFM5,

BTS550PE3146HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:8.62
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSFM-T5JESD-609代码:e3
功能数量:1端子数量:5
输出电流流向:SINK标称输出峰值电流:97 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
技术:MOS端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:200 µs
接通时间:400 µsBase Number Matches:1

BTS550PE3146HKSA1 数据手册

 浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第4页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第5页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第6页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第8页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第9页浏览型号BTS550PE3146HKSA1的Datasheet PDF文件第10页 
Data Sheet BTS550  
Truth Table  
Input  
current  
Output  
level  
Current  
Sense  
Remark  
level  
I
IS  
Normal  
L
H
L
H
0
=IL / kilis, up to IIS=IIS,lim  
operation  
Very high  
load current  
Current-  
limitation  
Short circuit to  
GND  
Over-  
temperature  
Short circuit to  
nominal  
up to VON=VON(Fold back)  
IS no longer proportional to IL  
VON > VON(Fold back)  
H
H
H
H
IIS, lim  
0
I
if VON>VON(SC), shutdown will occure  
L
H
L
H
L
H
L
H
L
L
L
L
H
H
0
0
0
0
0
22)  
V
bb  
<nominal  
23  
Open load  
0
0
)
Z
H
Negative output  
voltage clamp  
Inverse load  
current  
L
L
0
L
H
H
H
0
0
L = "Low" Level  
H = "High" Level  
Options Overview  
Type  
BTS  
550P  
Overtemperature protection with hysteresis  
X
T >150 °C, latch function24)  
j
X
T >150 °C, with auto-restart on cooling  
j
Short circuit to GND protection  
with overtemperature shutdown  
X
-
switches off when V >6 V typ.  
(when first turned on after approx. 180 µs)  
ON  
Overvoltage shutdown  
Output negative voltage transient limit  
to V - V  
X
bb ON(CL)  
25)  
to V  
OUT  
= -19 V typ  
X
Overtemperature reset by cooling: T < T (see diagram on page 14)  
j
jt  
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)  
22)  
23)  
24)  
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.  
Power Transistor "OFF", potential defined by external impedance.  
Latch except when V -V  
0 V only if forced externally). So the device remains latched unless V < V  
< V  
after shutdown. In most cases V  
= 0 V after shutdown (V  
bb  
OUT  
ON(SC)  
OUT  
OUT  
(see page 5). No latch  
bb  
ON(SC)  
between turn on and t  
.
d(SC)  
25)  
Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.  
Infineon Technologies AG  
7
2010-June-01  

与BTS550PE3146HKSA1相关器件

型号 品牌 描述 获取价格 数据表
BTS555 INFINEON Smart Highside High Current Power Switch (Overload protection Current limitation Short cir

获取价格

BTS555_10 INFINEON Smart Highside High Current Power Switch

获取价格

BTS555E3146 INFINEON Smart Highside High Current Power Switch

获取价格

BTS555-E3146 INFINEON Smart Highside High Current Power Switch

获取价格

BTS555E3146HKSA1 INFINEON Smart Highside High Current Power Switch

获取价格

BTS555P ETC Single Peripheral Driver

获取价格