Datasheet > BTS410-G2

BTS410-G2

更新时间： 2022-01-19 03:35:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	164K
描述
?4.7-42V. 220mΩ 1.8A Limit(scr) 2.7A

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数据手册

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BTS410-G2 数据手册

BTS 410 G2

Terms

Inductive and overvoltage output clamp

+ V

OUT

PROFET

OUT

GND

PROFET

GND

OUT

GND

clamped to 68 V typ.

Overvolt. and reverse batt. protection

Input circuit (ESD protection)

+ V

ESD-

Logic

ZD ZD

GND

PRO FET

GND

ZD 6 V typ., ESD zener diodes are not to be used as

GND

voltage clamp at DC conditions. Operation in this mode

may result in a drift of the zener voltage (increase of up

to 1 V).

Signal GND

= 6.2 V typ., V = 70 V typ., R

= 15 kΩ

= 150 Ω, R ,

GND IN

Status output

Open-load detection

+5V

ON-state diagnostic condition: V_ON< R_ON* I_L(OL); IN

high

ST(ON)

+ V

ESD-

GND

V_ON

ESD-Zener diode: 6 V typ., max 5 mA;

< 250 Ω at 1.6 mA, ESD zener diodes are not

ST(ON)

OUT

to be used as voltage clamp at DC conditions.

Operation in this mode may result in a drift of the zener

voltage (increase of up to 1 V).

Open load

detection

Logic

unit

Semiconductor Group

1...3 4 567 8 9...13

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