Datasheet > BTS410-G2

BTS410-G2

更新时间： 2022-01-19 03:35:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	164K
描述
?4.7-42V. 220mΩ 1.8A Limit(scr) 2.7A

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BTS410-G2 数据手册

BTS 410 G2

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

R_ON

I_L= 1.6 A

T=25 °C:

190

390

220

440

mΩ

T=150 °C:

Nominal load current, ISO Norm (pin 3 to 5)

_ON= 0.5 V, T = 85 °C

I_L(ISO)

1.6

1.8

Output current (pin 5) while GND disconnected or

GND pulled up, V =30 V, V = 0, see diagram

I_L(GNDhigh)

page 7, T =-40...+150°C

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

125

µs

R_L= 12 Ω, T =-40...+150°C

Slew rate on

10 to 30% V_OUT, R_L= 12 Ω, T =-40...+150°C

dV /dt_on

-dV/dt_off

3 V/µs

6 V/µs

Slew rate off

70 to 40% V_OUT, R_L= 12 Ω, T =-40...+150°C

Operating Parameters

Operating voltage ⁶⁾

T =-40...+150°C: V_bb(on)

4.7

2.9

2.7

Undervoltage shutdown

T =25°C: V_bb(under)

4.5

4.7

T =-40...+150°C:

Undervoltage restart

T =-40...+150°C: V_{bb(u rst)}

4.9

6.0

Undervoltage restart of charge pump

see diagram page 11

V_bb(ucp)

5.6

Undervoltage hysteresis

∆V_bb(under)= V_{bb(u rst)}- V_bb(under)

∆V_bb(under)

0.1

Overvoltage shutdown

Overvoltage restart

Overvoltage hysteresis

Overvoltage protection⁷⁾

I_bb=4 mA

T =-40...+150°C: V_bb(over)

T =-40...+150°C: V_{bb(o rst)}

T =-40...+150°C: ∆V_bb(over)

0.1

T =-40...+150°C: V_bb(AZ)

Standby current (pin 3)

V_IN=0

T_j=-40...+25°C: I_bb(off)

T_j= 150°C:

µA

I_L(off)

Leakage output current (included in I_bb(off)

V^IN=0

)

Operating current (Pin 1)⁸⁾, V_IN=5 V,

_Tj=-40...+150°C

I_GND

2.1 mA

At supply voltage increase up to V = 5.6 V typ without charge pump, V

≈V - 2 V

OUT

Meassured without load. See also V

in table of protection functions and circuit diagram page 6.

ON(CL)

Semiconductor Group

1 234 5 6 7...13

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