Datasheet > BTS410-H2

BTS410-H2

更新时间： 2024-02-11 02:50:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	171K
描述
?4.7-42V. 220mΩ 1.8A Limit(scr) 1.5A

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BTS410-H2 数据手册

PROFET BTS 410 H2

Smart Highside Power Switch

Features

Product Summary

•

Overload protection

Overvoltage protection

V_bb(AZ)

Current limitation

Short circuit protection

Thermal shutdown

Overvoltage protection (including load dump)

Fast demagnetization of inductive loads

Reverse battery protection

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

4.7 ... 42 V

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

bb(on)

220

mΩ

1.8

1.5

L(ISO)

L(SCr)

)

TO-220AB/5

•

Open drain diagnostic output

Open load detection in OFF-state

CMOS compatible input

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

Straight leads

Standard

SMD

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

Most suitable for inductive loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection

functions.

+ V

Vo lta g e

so urc e

Ga te

Ove rvo lta g e

p ro te c tio n

Curre nt

lim it

p ro te c tio n

Logic

OUT

Lim it fo r

unc la m p e d

ind . lo a d s

Cha rg e p um p

Le ve l shifte r

Vo lta g e

se nso r

Te m p e ra ture

se nso r

Re c tifie r

Op e n lo a d

d e te c tio n

Load

Lo g ic

ESD

Sho rt c irc uit

d e te c tio n

PROFET

GND

Load GND

Signal GND

With external current limit (e.g. resistor R =150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group

03.97

12 3 4 5 6 7...13

中文翻译

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