Datasheet > BTN9970LV

BTN9970LV

更新时间： 2023-09-03 20:37:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
33页	654K
描述
The MOTIX™ BTN9970LV is part of the MOTIX™ (NovalithIC™) family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit. The MOTIX™ BTN9970LV provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. This device comes in a small HSOF-7-1 package.

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BTN9970LV 数据手册

BTN9970LV NovalithIC^™+

High current PN half-bridge with integrated driver

3 General product characteristics

Table 2

(continued) Absolute Maximum Ratings

T_j= -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise

specified) ¹⁾

Parameter

Symbol

Values

Unit

Note or condition

Min. Typ. Max.

ESD robustness corner pins

(CDM) (pins VS, GND, OUT)

|V_{ESD(CDM,corner)}

–

750

CDM ⁴⁾

Latchup Robustness: class II according to AEC-Q100-04

Note:

Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the datasheet. Fault conditions are considered as “outside” normal operating range.

Protection functions are not designed for continuous repetitive operation.

Maximum applicable single pulse output current T_A< 125°C

100

Max. applicable single pulse output current I_OUT

Overcurrent detection level max. I_OCH0, I_OCL0

Overcurrent detection level min. I_OCH0, I_OCL0

1,00E-03

1,00E-02

1,00E-01

1,00E+00

1,00E+01

t_pulse[s]

Figure 5

Maximum single pulse current BTN9970LV

The diagram shows the maximum single pulse current that can be applied for a given pulse time t_pulse. The

maximum achievable current may be smaller and depends on the overcurrent detection level. Pulse time may

be limited due to thermal protection of the device.

Not subject to production test, specified by design.

Charged device model “CDM” robustness: class C2a according to AEC-Q100-011 Rev D. “TC” corresponds

to “test condition” according to AEC-Q100-011.

Datasheet

Rev. 1.0

2021-10-12

1...5 6 789 10 11...33

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