Datasheet > BTNA06N3

BTNA06N3

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	145K
描述
General Purpose NPN Epitaxial Planar Transistor

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数据手册

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BTNA06N3 数据手册

Spec. No. : C216N3

Issued Date : 2003.10.07

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

General Purpose NPN Epitaxial Planar Transistor

BTNA06N3

Description

• The BTNA06N3 is designed for use in general purpose amplification and switching application.

• High current , I_C= 0.5A

• Low V_CE(sat), V_CE(sat)= 0.25V(typ.) at I_C/I_B= 100mA/10mA

• Complementary to BTPA56N3

Symbol

Outline

BTNA06N3

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

500

°C

Power Dissipation

225

Junction Temperature

Storage Temperature

Tstg

150

-55~+150

BTNA06N3

CYStek Product Specification

12 3 4

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