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BTA204X-600E PDF预览

BTA204X-600E

更新时间: 2024-09-25 20:24:31
品牌 Logo 应用领域
飞利浦 - PHILIPS 三端双向交流开关栅极
页数 文件大小 规格书
7页 44K
描述
TRIAC, 600V V(DRM), 4A I(T)RMS,

BTA204X-600E 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
关态电压最小值的临界上升速率:30 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:12 mA
JESD-609代码:e3最大漏电流:0.5 mA
最大通态电压:1.7 V最高工作温度:125 °C
最大均方根通态电流:4 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)触发设备类型:TRIAC
Base Number Matches:1

BTA204X-600E 数据手册

 浏览型号BTA204X-600E的Datasheet PDF文件第2页浏览型号BTA204X-600E的Datasheet PDF文件第3页浏览型号BTA204X-600E的Datasheet PDF文件第4页浏览型号BTA204X-600E的Datasheet PDF文件第5页浏览型号BTA204X-600E的Datasheet PDF文件第6页浏览型号BTA204X-600E的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA204X series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation triacs  
in a plastic full pack envelope, intended for  
use in motor control circuits or with other  
highly inductive loads. These devices  
balance the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level" D  
series are intended for interfacing with low  
power drivers, including micro controllers.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BTA204X-  
BTA204X-  
BTA204X-  
600D  
600E  
600F  
VDRM  
Repetitive peak  
off-state voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
V
IT(RMS)  
ITSM  
4
25  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
case  
main terminal 1  
main terminal 2  
gate  
T2  
T1  
2
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
6001  
4
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
A
Ths 92 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
25  
27  
3.1  
100  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
IGM  
PGM  
PG(AV)  
-
-
-
2
5
0.5  
A
W
W
over any 20 ms  
period  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
May 2003  
1
Rev 2.000  

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