BTA08-600CW3G,
BTA08-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
• Blocking Voltage to 800 V
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
• On-State Current Rating of 8 A RMS at 25°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1500 V/ꢀ s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 1.5 A/ms minimum at 125°C
MT2
MT1
G
4
MARKING
DIAGRAM
• Internally Isolated (2500 V
• These are Pb−Free Devices
)
RMS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
J
V
V
DRM,
RRM
BTA08−xCWG
(T = −40 to 125°C, Sine Wave,
V
TO−220AB
CASE 221A
STYLE 12
AYWW
50 to 60 Hz, Gate Open)
1
BTA08−600CW3G
BTA08−800CW3G
600
800
2
3
On-State RMS Current
I
8.0
A
A
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
T(RMS)
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
C
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
TSM
90
T
C
= 25°C)
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
36
A sec
Non−Repetitive Surge Peak Off−State
V
V
V
V
DSM/
RSM
DSM/ RSM
PIN ASSIGNMENT
Voltage (T = 25°C, t = 10ms)
V
+100
J
1
2
3
4
Main Terminal 1
Peak Gate Current (T = 125°C, t = 20ms)
I
4.0
A
J
GM
Main Terminal 2
Gate
Peak Gate Power
P
20
W
GM
(Pulse Width ≤ 1.0 ꢀ s, T = 80°C)
C
Average Gate Power (T = 125°C)
P
G(AV)
1.0
W
°C
°C
V
J
No Connection
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
T
J
−40 to +125
−40 to +150
2500
T
stg
ORDERING INFORMATION
V
iso
(t = 300 ms, R.H. ≤ 30%, T = 25°C)
A
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BTA08−600CW3G TO−220AB
(Pb−Free)
50 Units / Rail
BTA08−800CW3G TO−220AB
(Pb−Free)
50 Units / Rail
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
August, 2008 − Rev. 0
BTA08−600CW3/D
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