Datasheet > BT169-600

BT169-600

更新时间： 2023-12-06 20:08:54

品牌	Logo	应用领域
鲁光 - LGE		可控硅
页数	文件大小	规格书
1页	728K
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单向可控硅

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BT169-600 数据手册

BT169

TO-92 Plastic-Encapsulate Transistors

SCR

DESCRIPTION

The BT169 is glass passivated, sensitive gate thyristors

in a plastic envelope, intended for use in general purpose

switching and phase control applications. These devices

are intended to be interfaced directly to microcontrollers,

logic integrated circuits and other low power gate trigger

circuits.

Absolute Maximum Ratings (Ta=25℃)

Value

Parameter

Symbol

Unit

_DRM，V_RRM

I_T(AV)

I_T(RMS)

I_TSM

V_GRM

I_GM

Repetitive peak off-state voltages

Average on-state current

On-State Current

200

400

500

600

0.63

Peak Forward Surge Current

Peak Reverse Gate Voltage

Peak Gate Current

Gate Dissipation

℃

P_G

0.1

（

）

Storage Temperature

T_J、T_STG

-40～＋125

Electrical Characteristics (Ta=25℃unless otherwise stated)

Value

Min Max

Parameter

Symbol

Conditions

Unit

On state voltage

Gate trigger voltage

Gate trigger current

Latching current

Holding current

V_T

V_GT

I_GT

I_L

I_T= 2A

1.5

0.8

V_D=12 V; I_T=10mA; gate open circuit

V_D=12V, I_GT＝0.5mA，R_AG=1kΩ

μA

200

I_H

V_D＝V_DRM(max), V_R＝V_RRM(max

T_J＝125℃, R_AG=1kΩ

)

0.1

Off-state leakage current

I_D，I_R

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Revision:20190101-P2

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