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BT151X-800R,127 PDF预览

BT151X-800R,127

更新时间: 2024-02-02 11:40:57
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页数 文件大小 规格书
12页 171K
描述
BT151X-800R

BT151X-800R,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:6.91
外壳连接:ISOLATED标称电路换相断开时间:70 µs
配置:SINGLE关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:15 mA最大直流栅极触发电压:1.5 V
最大维持电流:20 mAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:0.5 mA
通态非重复峰值电流:132 A元件数量:1
端子数量:3最大通态电流:7500 A
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:9 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

BT151X-800R,127 数据手册

 浏览型号BT151X-800R,127的Datasheet PDF文件第2页浏览型号BT151X-800R,127的Datasheet PDF文件第3页浏览型号BT151X-800R,127的Datasheet PDF文件第4页浏览型号BT151X-800R,127的Datasheet PDF文件第5页浏览型号BT151X-800R,127的Datasheet PDF文件第6页浏览型号BT151X-800R,127的Datasheet PDF文件第7页 
BT151X-800R  
SCR  
24 July 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack"  
plastic package intended for use in applications requiring high bidirectional blocking  
voltage and high current surge capability with high thermal cycling performance.  
1.2 Features and benefits  
High bidirectional blocking voltage capability  
High current surge capability  
High thermal cycling performance  
Isolated mounting base package  
Planar passivated for voltage ruggedness and reliability  
1.3 Applications  
Capacitive Discharge Ignition (CDI)  
Crowbar protection  
Inrush protection  
Motor control  
Voltage regulation  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
VRRM  
ITSM  
repetitive peak off-  
state voltage  
-
-
800  
V
repetitive peak reverse  
voltage  
-
-
-
-
800  
120  
V
A
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;  
state current  
tp = 10 ms; Fig. 4; Fig. 5  
IT(RMS)  
RMS on-state current  
half sine wave; Th ≤ 69 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
12  
15  
A
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
2
mA  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 

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