Datasheet > BT151Y-650LTF

BT151Y-650LTF

更新时间： 2024-04-09 18:59:26

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	489K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C).

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BT151Y-650LTF 数据手册

BT151Y-650LTF

SCR

Rev.03 - 26 May 2023

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in a IITO220 plastic package intended for use

in applications requiring good bidirectional blocking voltage and high surge current capability and

high junction temperature capability (T_j(max)= 150 °C).

2. Features and beneﬁts

•

High junction operating temperature capability (T_j(max)= 150 °C)

•

High bidirectional blocking voltage capability

Very high current surge capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

Internally insulated package

Isolated mounting base with 2500 V_(RMS)isolation

3. Applications

•

Capacitive Discharge Ignition (CDI)

Crowbar protection

Inrush protection

Motor control

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

650

RMS on-state current

half sine wave; T_mb≤ 122 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

120

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

132

150

T_j

junction temperature

°C

Static characteristics

I_GTgate trigger current

I_H

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; T_j= 25 °C; Fig. 9

1.5

holding current

on-state voltage

1.5

V_T

I_T= 12 A; T_j= 25 °C; Fig. 10

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 436 V; T_j= 150 °C; R_GK= 100 Ω;

(V_DM= 67% of V_DRM); exponential waveform

500

200

V/μs

V_DM= 436 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate open

circuit

12 3 4 5 6 7...12

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