Datasheet > BT151U-800C

BT151U-800C

更新时间： 2024-01-03 16:51:28

品牌	Logo	应用领域
恩智浦 - NXP		栅极
页数	文件大小	规格书
6页	45K
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Thyristors

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BT151U-800C 数据手册

Philips Semiconductors

Product specification

Thyristors

BT151U series C

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated thyristors in a plastic

envelope, intended for use in

SYMBOL PARAMETER

MAX.

MAX. UNIT

800C

applications

requiring

high

BT151U-

500C

500

650C

650

bidirectional blocking voltage

capability and high thermal cycling

performance. Typical applications

include motor control, industrial

and domestic lighting, heating and

static switching.

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

800

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

on-state

7.5

100

7.5

100

7.5

I_T(RMS)

I_TSM

100

current

PINNING - SOT533, (I-PAK)

PIN CONFIGURATION

SYMBOL

NUMBER

DESCRIPTION

cathode

anode

gate

Top view

MBK915

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500C -650C -800C

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

650¹

800

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_mb≤ 104 ˚C

7.5

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

100

110

t = 8.3 ms

t = 10 ms

I_TM= 20 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Junction temperature

0.5

150

125

˚C

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

April 2004

Rev 1.000

12 3 4 5 6

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