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BT139-800E PDF预览

BT139-800E

更新时间: 2024-04-09 19:02:37
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 368K
描述
Planar passivated sensitive gate four quadrant triac in a SOT78 (T0-220AB) plastic package intende

BT139-800E 数据手册

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BT139-800E  
4Q Triac  
26 September 2018  
Product data sheet  
1. General description  
Planar passivated sensitive gate four quadrant triac in a SOT78 (T0-220AB) plastic package  
intended for use in general purpose bidirectional switching and phase control applications.  
This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic  
integrated circuits and other low power gate trigger circuits.  
2. Features and benefits  
Direct triggering from low power drivers and logic ICs  
High blocking voltage capability  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate  
Triggering in all four quadrants  
3. Applications  
General purpose phase control  
General purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 99 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
16  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
155  
170  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
2.5  
4
10  
10  
10  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
5
 
 
 
 

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