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BT138X-600D PDF预览

BT138X-600D

更新时间: 2024-09-26 17:02:15
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 475K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT186A (TO-220F) "full pack" plast

BT138X-600D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.56
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:ISOLATED配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:12 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT138X-600D 数据手册

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BT138X-600D  
4Q Triac  
Rev.02 - 27 January 2021  
Product data sheet  
1. General description  
Planar passivated very sensitive gate four quadrant triac in a TO220F "full pack" plastic package  
intended for use in general purpose bidirectional switching and phase control applications, where  
high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended  
to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger  
circuits.  
2. Features and benefits  
Direct triggering from low power drivers and logic ICs  
High blocking voltage capability  
Isolated package  
Planar passivated for voltage ruggedness and reliability  
Triggering in all four quadrants  
Very sensitive gate  
3. Applications  
General purpose motor control  
General purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
ITSM  
repetitive peak off-state  
voltage  
-
-
600  
V
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
-
-
95  
A
state current  
Fig. 4; Fig. 5  
Tj  
junction temperature  
-
-
-
-
125  
12  
°C  
A
IT(RMS)  
RMS on-state current  
full sine wave; Th ≤ 56 °C;  
Fig. 1; Fig. 2; Fig. 3  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
1.3  
2.8  
3.2  
5.5  
5
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
5
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
5
VD = 12 V; IT = 0.1 A; T2- G+;  
10  
Tj = 25 °C; Fig. 7  

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