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BT137S-800E,118 PDF预览

BT137S-800E,118

更新时间: 2024-02-12 08:02:54
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恩智浦 - NXP 三端双向交流开关栅极
页数 文件大小 规格书
6页 39K
描述
BT137S-800E

BT137S-800E,118 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, SC-63, TO-252, DPAK-3/2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80Factory Lead Time:6 weeks
风险等级:5.54其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大均方根通态电流:8 A参考标准:IEC-60134
断态重复峰值电压:800 V表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT137S-800E,118 数据手册

 浏览型号BT137S-800E,118的Datasheet PDF文件第1页浏览型号BT137S-800E,118的Datasheet PDF文件第3页浏览型号BT137S-800E,118的Datasheet PDF文件第4页浏览型号BT137S-800E,118的Datasheet PDF文件第5页浏览型号BT137S-800E,118的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
sensitive gate  
BT137S series E  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
75  
2.0  
2.4  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
pcb (FR4) mounted; footprint as in Fig.14  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
Gate trigger current  
VD = 12 V; IT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
-
-
-
-
2.5  
4.0  
5.0  
11  
10  
10  
10  
25  
mA  
mA  
mA  
mA  
IL  
Latching current  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
-
3.0  
14  
25  
35  
mA  
mA  
mA  
mA  
mA  
V
V
V
mA  
-
-
3.0  
4.0  
2.5  
1.3  
0.7  
0.4  
0.1  
25  
-
35  
IH  
VT  
VGT  
Holding current  
On-state voltage  
Gate trigger voltage  
VD = 12 V; IGT = 0.1 A  
IT = 10 A  
-
20  
-
1.65  
1.5  
-
VD = 12 V; IT = 0.1 A  
-
0.25  
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
ID  
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
tgt  
Critical rate of rise of  
off-state voltage  
Gate controlled turn-on  
time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; gate open circuit  
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
-
-
50  
2
-
-
V/µs  
µs  
June 2001  
2
Rev 1.400  

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