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BT137S-600G,118 PDF预览

BT137S-600G,118

更新时间: 2024-01-16 11:34:23
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关栅极
页数 文件大小 规格书
6页 40K
描述
BT137S-600G

BT137S-600G,118 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, SC-63, TO-252, DPAK-3/2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80Factory Lead Time:6 weeks
风险等级:5.52外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大均方根通态电流:8 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BT137S-600G,118 数据手册

 浏览型号BT137S-600G,118的Datasheet PDF文件第1页浏览型号BT137S-600G,118的Datasheet PDF文件第3页浏览型号BT137S-600G,118的Datasheet PDF文件第4页浏览型号BT137S-600G,118的Datasheet PDF文件第5页浏览型号BT137S-600G,118的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
BT137S series  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
75  
2.0  
2.4  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
pcb (FR4) mounted; footprint as in Fig.14  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP.  
MAX.  
...F  
UNIT  
BT137S-  
VD = 12 V; IT = 0.1 A  
...  
...G  
IGT  
Gate trigger current  
Latching current  
Holding current  
T2+ G+  
-
-
-
-
5
8
11  
30  
35  
35  
35  
70  
25  
25  
25  
70  
50  
50  
mA  
mA  
mA  
mA  
T2+ G-  
T2- G-  
50  
T2- G+  
100  
IL  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
-
-
-
-
-
7
16  
5
30  
45  
30  
45  
20  
30  
45  
30  
45  
20  
45  
60  
45  
60  
40  
mA  
mA  
mA  
mA  
mA  
T2+ G-  
T2- G-  
T2- G+  
7
IH  
VD = 12 V; IGT = 0.1 A  
5
VT  
On-state voltage  
IT = 10 A  
-
-
1.3  
0.7  
0.4  
1.65  
1.5  
-
V
V
V
VGT  
Gate trigger voltage  
VD = 12 V; IT = 0.1 A  
VD = 400 V; IT = 0.1 A;  
Tj = 125 ˚C  
0.25  
ID  
Off-state leakage current VD = VDRM(max)  
;
-
0.1  
0.5  
mA  
Tj = 125 ˚C  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
BT137S-  
VDM = 67% VDRM(max)  
...  
...F  
...G  
dVD/dt  
dVcom/dt  
tgt  
Critical rate of rise of  
off-state voltage  
;
100  
50  
200  
250  
20  
2
-
-
-
V/µs  
V/µs  
µs  
Tj = 125 ˚C; exponential  
waveform; gate open  
circuit  
Critical rate of change of  
commutating voltage  
VDM = 400 V; Tj = 95 ˚C;  
IT(RMS) = 8 A;  
-
-
-
-
10  
-
dIcom/dt = 3.6 A/ms; gate  
open circuit  
Gate controlled turn-on  
time  
ITM = 12 A; VD = VDRM(max);  
IG = 0.1 A; dIG/dt = 5 A/µs  
June 2001  
2
Rev 1.400  

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