5秒后页面跳转
BSM10GP60 PDF预览

BSM10GP60

更新时间: 2024-02-19 08:43:21
品牌 Logo 应用领域
EUPEC 双极性晶体管
页数 文件大小 规格书
11页 109K
描述
IGBT-Module

BSM10GP60 技术参数

生命周期:Obsolete包装说明:ECONOPIM
Reach Compliance Code:unknown风险等级:5.67
最大集电极电流 (IC):10 A集电极-发射极最大电压:600 V
配置:COMPLEXJESD-30 代码:R-XUFM-X
元件数量:7封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

BSM10GP60 数据手册

 浏览型号BSM10GP60的Datasheet PDF文件第2页浏览型号BSM10GP60的Datasheet PDF文件第3页浏览型号BSM10GP60的Datasheet PDF文件第4页浏览型号BSM10GP60的Datasheet PDF文件第5页浏览型号BSM10GP60的Datasheet PDF文件第6页浏览型号BSM10GP60的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM10GP60  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Diode Gleichrichter/ Diode Rectifier  
Periodische Rückw. Spitzensperrspannung  
repetitive peak reverse voltage  
VRRM  
1600  
40  
V
A
A
Durchlaßstrom Grenzeffektivwert  
RMS forward current per chip  
IFRMSM  
Dauergleichstrom  
TC = 80°C  
Id  
10  
DC forward current  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
IFSM  
Stoßstrom Grenzwert  
surge forward current  
Grenzlastintegral  
I2t - value  
300  
230  
450  
260  
A
A
A2s  
A2s  
I2t  
Transistor Wechselrichter/ Transistor Inverter  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
600  
V
IC,nom.  
IC  
Tc = 80 °C  
10  
20  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms,  
TC  
=
ICRM  
80 °C  
20  
80  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Wechselrichter/ Diode Inverter  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
tP = 1 ms  
10  
20  
50  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
Grenzlastintegral  
I2t - value  
I2t  
A2s  
VR = 0V, tp = 10ms, Tvj = 125°C  
Transistor Brems-Chopper/ Transistor Brake-Chopper  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
600  
V
TC = 80 °C  
IC,nom.  
IC  
10  
20  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
Ptot  
20  
80  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Brems-Chopper/ Diode Brake-Chopper  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
10  
20  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
prepared by: Andreas Schulz  
approved by: MN.Hierholzer  
date of publication:17.09.1999  
revision: 4  
1(11)  
DB-PIM-9.xls  

与BSM10GP60相关器件

型号 品牌 获取价格 描述 数据表
BSM10GP602 EUPEC

获取价格

IGBT Module
BSM111 INFINEON

获取价格

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
BSM111AR INFINEON

获取价格

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
BSM111AR(C) ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D)
BSM120C12P2C201 ROHM

获取价格

本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC
BSM120D12P2C005 ROHM

获取价格

Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Me
BSM121 ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
BSM121AR INFINEON

获取价格

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
BSM121AR(C) ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
BSM141 INFINEON

获取价格

Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Me