生命周期: | Obsolete | 包装说明: | ECONOPIM |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | JESD-30 代码: | R-XUFM-X |
元件数量: | 7 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSM10GP602 | EUPEC |
获取价格 |
IGBT Module | |
BSM111 | INFINEON |
获取价格 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) | |
BSM111AR | INFINEON |
获取价格 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) | |
BSM111AR(C) | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D) | |
BSM120C12P2C201 | ROHM |
获取价格 |
本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC | |
BSM120D12P2C005 | ROHM |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Me | |
BSM121 | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) | |
BSM121AR | INFINEON |
获取价格 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) | |
BSM121AR(C) | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) | |
BSM141 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Me |