Datasheet > BS62LV4008SC-70

BS62LV4008SC-70

更新时间： 2022-12-14 03:57:07

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	374K
描述
Very Low Power/Voltage CMOS SRAM 512K X 8 bit

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中文翻译

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数据手册

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BS62LV4008SC-70 数据手册

BSI

BS62LV4008

PIN DESCRIPTIONS

Name

Function

A0-A18 Address Input

These 19 address inputs select one of the 524,288 x 8-bit words in the RAM

CE Chip Enable Input

WE Write Enable Input

CE is active LOW. Chip enables must be active when data read from or write to the

device. if chip enable is not active, the device is deselected and is in a standby power

mode. The DQ pins will be in the high impedance state when the device is deselected.

The write enable input is active LOW and controls read and write operations. With the

chip selected, when WE is HIGH and OE is LOW, output data will be present on the

DQ pins; when WE is LOW, the data present on the DQ pins will be written into the

selected memory location.

OE Output Enable Input

The output enable input is active LOW. If the output enable is active while the chip is

selected and the write enable is inactive, data will be present on the DQ pins and they

will be enabled. The DQ pins will be in the high impedance state when OE is inactive.

These 8 bi-directional ports are used to read data from or write data into the RAM.

DQ0-DQ7 Data Input/Output

Ports

Vcc

Power Supply

Ground

GND

TRUTH TABLE

MODE

Not selected

Output Disabled

Read

I/O OPERATION

High Z

Vcc CURRENT

I_CCSB, I_CCSB1

High Z

I_CC

OUT

Write

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

OPERATING RANGE

AMBIENT

TEMPERATURE

0 ^OC to +70 ^O

SYMBOL

VTERM

TBIAS

TSTG

PARAMETER

RATING

UNITS

RANGE

Vcc

Terminal Voltage with

Respect to GND

-0.5 to

Vcc+0.5

Commercial

Industrial

2.4V ~ 3.6V

Temperature Under Bias

Storage Temperature

Power Dissipation

-40 to +85

-60 to +150

1.0

^OC

-40 ^OC to +85^O

^OC

CAPACITANCE ⁽¹⁾(TA = 25^oC, f = 1.0 MHz)

DC Output Current

IOUT

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

Input

CIN

VIN=0V

Capacitance

Input/Output

Capacitance

CDQ

VI/O=0V

1. This parameter is guaranteed and not 100% tested.

Revision 1.1

Jan. 2004

R0201-BS62LV4008

123 4 5 6 7...10

中文翻译

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与BS62LV4008SC-70相关器件

型号	品牌	获取价格	描述	数据表
BS62LV4008SCG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SCP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI55	BSI	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32
BS62LV4008SI-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SI70	BSI	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
BS62LV4008SI-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4008SIG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 8 bit

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