Datasheet > BS62LV4008PI-55

BS62LV4008PI-55

更新时间： 2022-11-26 06:28:03

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	374K
描述
Very Low Power/Voltage CMOS SRAM 512K X 8 bit

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BS62LV4008PI-55 数据手册

BSI

BS62LV4008

DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85^oC )

PARAMETER

(1)

UNITS

PARAMETER

TEST CONDITIONS

MIN. TYP.

MAX.

NAME

Guaranteed Input Low

Voltage

Vcc = 3.0 V

V^IL

-0.5

0.8

(3)

Guaranteed Input High

2.0

Vcc+0.3

(3)

Voltage

Input Leakage Current

Vcc = Max, V = 0V to Vcc

Vcc = Max, CE = V , or OE = V ,

I^LO

Output Leakage Current

^I/O= 0V to Vcc

Vcc = 3.0 V

0.4

Output Low Voltage

Output High Voltage

Vcc = Max, I = 2.0mA

= -1.0mA

Vcc = Min, I

2.4

(5)

55ns

70ns

CE = V , I = 0mA,

F=Fmax⁽²⁾

Operating Power Supply

Current

Vcc = 3.0 V

CCSB

CE = V , I = 0mA

Vcc = 3.0 V

0.5

Standby Current-TTL

(4)

Vcc-0.2V,

≧

Standby Current-CMOS

I^CCSB1

0.45

Vcc - 0.2V or V

0.2V

≦

1. Typical characteristics are at TA = 25^oC.

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. IccSB1_MAX. is 5uA at Vcc=3.0V and TA=70^oC. 5. Icc_MAX. is 29mA(@55ns) / 24mA(@70ns) at Vcc=3.0V and TA=0~70^oC.

2. Fmax = 1/t_RC.

DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85^oC )

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. ⁽¹⁾

MAX.

UNITS

CE ≧ Vcc - 0.2V

V^IN≧ Vcc - 0.2V or VIN ≦ 0.2V

V_DR

Vcc for Data Retention

1.5

CE ≧ Vcc - 0.2V

V^IN≧ Vcc - 0.2V or V^IN≦ 0.2V

I_CCDR

Data Retention Current

0.3

1.3

Chip Deselect to Data

Retention Time

t_CDR

t_R

See Retention Waveform

(2)

Operation Recovery Time

T_RC

1. Vcc = 1.5V, T_A= + 25^OC

2. t_RC= Read Cycle Time

3. IccDR_MAX. is 0.8uA at TA=70^OC.

LOW V_CCDATA RETENTION WAVEFORM ( CE Controlled )

Data Retention Mode

^DR≥ 1.5V

Vcc

CDR

≥

CE Vcc - 0.2V

VIH

Revision 1.1

R0201-BS62LV4008

Jan.

2004

1 234 5 6 7...10

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