Datasheet > BS616LV8011AI

BS616LV8011AI

更新时间： 2024-01-04 12:49:40

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	193K
描述
Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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中文翻译

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数据手册

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BS616LV8011AI 数据手册

Very Low Power/Voltage CMOS SRAM

512K X 16 bit

BSI

BS616LV8011

DESCRIPTION

FEATURES

The BS616LV8011 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a wide range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 1uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable(CE1,CE2) and active LOW output enable(OE) and three-state

output drivers.

• Very low operation voltage : 2.7 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 40mA (Max.) operating current

I-grade : 50mA (Max.) operating current

1uA (Typ.) CMOS standby current

• High speed access time :

-70

-10

70ns (Max.) at Vcc=3.0V

100ns (Max.) at Vcc=3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV8011 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV8011 is available in 48-pin BGA package.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1,CE2 and OE options

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

PRODUCT FAMILY

Vcc

(ICCSB1, Max)

(ICC, Max)

PKG TYPE

TEMPERATURE

RANGE

Vcc=3.0V

70 / 100

Vcc=3.0V

16uA

Vcc=3.0V

40mA

50mA

BS616LV8011AC

BS616LV8011AI

+0 ^OC to +70^O

-40^OC to +85^O

2.7V ~ 3.6V

BGA-48-0608

24uA

PIN CONFIGURATIONS

BLOCK DIAGRAM

Address

Input

CE2

2048

A17

A16

A15

A14

A13

A12

Row

Memory Array

2048 x 4096

Buffer

CE1

Decoder

D10

4096

Data

Column I/O

Input

D11

D12

D13

A17

Buffer

VSS

VCC

D14

VCC

Write Driver

Sense Amp

256

Vss

A14

A12

A16

A15

A13

A10

Data

VSS

Output

Buffer

Column Decoder

D15

CE1

CE2

D15 NC.

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5 A18

A18

A11

NC.

Vcc

Gnd

48-Ball CSP top View

X: Don’t care

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.3

April 2002

R0201-BS616LV8011

12 3 4 5 6 7...9

中文翻译

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与BS616LV8011AI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8012	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8012BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8012BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013FC55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48
BS616LV8013FC70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
BS616LV8013FCG55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCG70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MINIBGA-48

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