Datasheet > BS616LV8013BI

BS616LV8013BI

更新时间： 2024-09-30 23:04:27

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	204K
描述
Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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中文翻译

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数据手册

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BS616LV8013BI 数据手册

Very Low Power/Voltage CMOS SRAM

512K X 16 bit

BSI

BS616LV8013

FEATURES

DESCRIPTION

• Very low operation voltage : 2.4~3.6V

• Very low power consumption :

The BS616LV8013 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.5uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by an active LOW chip enable(CE1),

active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

• High speed access time :

-70

-10

70ns (Max.) at Vcc=3V

100ns (Max.) at Vcc=3V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV8013 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

The BS616LV8013 is available in 48-pin BGA package.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

Vcc

(ICCSB1, Max)

(ICC, Max)

PRODUCT FAMILY

PKG TYPE

TEMPERATURE

RANGE

Vcc=3V

70 / 100

Vcc=3V

3uA

Vcc=3V

20mA

25mA

BS616LV8013BC

BS616LV8013BI

+0 ^OC to +70^O

-40^OC to +85^O

2.4V ~ 3.6V

BGA-48-0810

6uA

PIN CONFIGURATIONS

BLOCK DIAGRAM

A17

A16

A15

A14

A13

A12

Address

Input

CE2

2048

Row

Memory Array

2048 x 4096

Buffer

CE1

Decoder

D10

4096

Data

Column I/O

Input

VSS D11

VCC D12

A17

VCC

Buffer

Write Driver

Sense Amp

256

A16

A15

A13

A10

Data

VSS

A14

VSS

Output

Buffer

Column Decoder

D15

D14

D15

A18

D13

CE2

CE1

A11

A12

N.C

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5 A18

Vcc

Gnd

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.0

April 2002

R0201-BS616LV8013

12 3 4 5 6 7...9

中文翻译

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与BS616LV8013BI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8013FC55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48
BS616LV8013FC70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
BS616LV8013FCG55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCG70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCP55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCP70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FI55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48
BS616LV8013FI70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
BS616LV8013FIG55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FIG70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MINIBGA-48

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