Datasheet > BS616LV8012

BS616LV8012

更新时间： 2024-02-07 21:08:09

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	208K
描述
Very Low Power/Voltage CMOS SRAM 512K X 16 bit

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV8012 数据手册

Very Low Power/Voltage CMOS SRAM

512K X 16 bit

BSI

BS616LV8012

FEATURES

DESCRIPTION

• Very low operation voltage : 2.4~5.5V

• Very low power consumption :

The BS616LV8012 is a high performance, very low power CMOS Static

Random Access Memory organized as 524,288 words by 16 bits and

operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.5uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by an active LOW chip enable(CE1),

active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

Vcc = 5.0V C-grade: 45mA (Max.) operating current

I-grade : 50mA (Max.) operating current

3uA (Typ.) CMOS standby current

• High speed access time :

-70

-10

70ns (Max.) at Vcc=3V

100ns (Max.) at Vcc=3V

The BS616LV8012 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV8012 is available in 48-pin BGA package.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

Vcc

(ICCSB1, Max)

(ICC, Max)

PRODUCT FAMILY

PKG TYPE

TEMPERATURE

RANGE

Vcc=3V

70 / 100

Vcc=3V

Vcc=5V

30uA

Vcc=3V

Vcc=5V

45mA

50mA

BS616LV8012BC

BS616LV8012BI

+0 ^OC to +70^O

-40^OC to +85^O

2.4V ~ 5.5V

3uA

6uA

20mA

25mA

BGA-48-0810

100uA

PIN CONFIGURATIONS

BLOCK DIAGRAM

A17

A16

A15

A14

A13

A12

Address

Input

CE2

2048

Row

Decoder

Memory Array

2048 x 4096

Buffer

CE1

D10

4096

Data

Column I/O

Input

VSS D11

VCC D12

A17

VCC

Buffer

Write Driver

Sense Amp

256

A16

A15

A13

A10

Data

VSS

A14

VSS

Output

Buffer

Column Decoder

D15

D14

D15

A18

D13

CE2

CE1

A11

A12

N.C

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5 A18

Vcc

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616LV8012

12 3 4 5 6 7...9

中文翻译

下载PDF

与BS616LV8012相关器件

型号	品牌	获取价格	描述	数据表
BS616LV8012BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8012BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8013FC55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48
BS616LV8013FC70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
BS616LV8013FCG55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCG70	BSI	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MINIBGA-48
BS616LV8013FCP55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MINIBGA-48

与BS616LV8012相关文章

REF70数据手册解读：高精度电压参考源的全面剖析
2024-07-08

4
解析30211801数据手册：PCB端子排MKDSV 5/3-9.5
2024-07-08

3
UL248-14数据手册深度解读：微型保险丝的全面剖析
2024-07-08

5
BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

18

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV8012

BS616LV8012 数据手册

与BS616LV8012相关器件

与BS616LV8012相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV8012

BS616LV8012 数据手册

与BS616LV8012相关器件

与BS616LV8012相关文章

您还可以找

您在本页遇到什么问题？