Datasheet > BS616LV4023BI

BS616LV4023BI

更新时间： 2024-02-21 23:31:24

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	221K
描述
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

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中文翻译

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BS616LV4023BI 数据手册

Very Low Power/Voltage CMOS SRAM

256K x 16 or 512K x 8 bit switchable

BSI

BS616LV4023

DESCRIPTION

FEATURES

The BS616LV4023 is a high performance, very low power CMOS Static

Random Access Memory organized as 262,144words by 16 bits or

524,288 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 2.4V to 3.6V supply voltage.

• Very low operation voltage : 2.4 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.25uA (Typ.) CMOS standby current

• High speed access time :

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.25uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

-70

-10

70ns (Max.) at Vcc=3.0V

100ns (Max.) at Vcc=3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV4023 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV4023 is available in DICE form and 48-ball BGA type.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

(ns)

PKG TYPE

CCSB1

(I , Max)

, Max)

TEMPERATURE

RANGE

Vcc=

Vcc=3.0V

70 / 100

Vcc=3.0V

3.0V

BS616LV4023DC

BS616LV4023BC

BS616LV4023DI

BS616LV4023BI

DICE

+0 ^OC to +70^O

-40 ^OC to +85^O

2.4V ~ 3.6V

20mA

25mA

1.5uA

3uA

BGA-48-0810

DICE

BGA-48-0810

BLOCK DIAGRAM

PIN CONFIGURATION

A15

A14

A13

A12

A11

A10

Address

Input

2048

Row

Memory Array

2048 x 2048

Buffer

Decoder

A17

2048

Data

16(8)

Column I/O

Input

Buffer

Write Driver

Sense Amp

16(8)

128(256)

Data

Output

Buffer

Column Decoder

D15

CE1

CE2

14(16)

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3

A4 A5

(SAE)

Vdd

Vss

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.0

April 2002

R0201-BS616LV4023

12 3 4 5 6 7...11

中文翻译

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与BS616LV4023BI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV4023DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4023DI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4025	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4025BC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4025BI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4025DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV4025DI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616LV8010	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010EC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010EC55	BSI	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44

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