Very Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable
BSI
BS616LV4025
DESCRIPTION
FEATURES
The BS616LV4025 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 4.5V to 5.5V supply voltage.
• Operation voltage : 4.5~5.5V
• Low power consumption :
Vcc = 5.0V C-grade: 45mA (Max.) operating current
I-grade : 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
• High speed access time :
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.5uA and maximum access time of 70/55ns in 5V operation.
Easy memory expansion is provided by an active HIGH chip
enable2(CE2), and active LOW chip enable1(CE1), an active LOW
output enable(OE) and three-state output drivers.
-70
-55
70ns (Max.) at Vcc=5V
55ns (Max.) at Vcc=5V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
The BS616LV4025 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616LV4025 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
POWER DISSIPATION
SPEED
STANDBY
Operating
OPERATING
(ns)
PRODUCT FAMILY
Vcc RANGE
PKG TYPE
(ICCSB1, Max)
(ICC, Max)
TEMPERATURE
Vcc = 5.0V
Vcc = 5.0V
15uA
Vcc = 5.0V
45mA
BS616LV4025DC
BS616LV4025BC
BS616LV4025DI
BS616LV4025BI
DICE
+0 O C to +70O
-40 O C to +85O
C
C
4.5 ~ 5.5V
4.5 ~ 5.5V
70 / 55
70 / 55
BGA-48-0810
DICE
50uA
50mA
BGA-48-0810
BLOCK DIAGRAM
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
Address
Input
22
2048
Row
Memory Array
2048 x 2048
Buffer
A8
Decoder
A17
A7
A6
2048
Data
16(8)
16(8)
Column I/O
Input
D0
Buffer
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
16(8)
16(8)
128(256)
Data
Output
Buffer
Column Decoder
D15
CE1
CE2
14(16)
WE
OE
UB
Control
Address Input Buffer
LB
CIO
A16 A0 A1 A2 A3
A4 A5
(SAE)
Vdd
Vss
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Revision 2.4
April 2002
R0201-BS616LV4025
1