Datasheet > BS616LV2019_08

BS616LV2019_08

更新时间： 2024-09-29 07:15:27

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	234K
描述
Very Low Power CMOS SRAM 128K X 16 bit

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中文翻译

获取价格

数据手册

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BS616LV2019_08 数据手册

Very Low Power CMOS SRAM

128K X 16 bit

BS616LV2019

Pb-Free and Green package materials are compliant to RoHS

FEATURES

DESCRIPTION

y Wide V_CCoperation voltage : 2.4V ~ 3.6V

y Very low power consumption :

The BS616LV2019 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 by 16 bits and

operates form a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum CMOS standby

current of 3/5uA at 3V at 70/85^OC and maximum access time of

55/70ns.

V_CC= 3.0V

Operation current : 25mA (Max.) at 55ns

2mA (Max.) at 1MHz

Standby current : 3/5uA (Max.) at 70/85^OC

y High speed access time :

-55

-70

55ns(Max.) at V_CC=2.7~3.6V

70ns(Max.) at V_CC=2.4~3.6V

Easy memory expansion is provided by an active LOW chip enable

(CE) and active LOW output enable (OE) and three-state output

drivers.

The BS616LV2019 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV2019 is available in DICE form, JEDEC standard

48-pin TSOP Type I package and 48-ball BGA package.

y Automatic power down when chip is deselected

y Easy expansion with CE and OE options

y I/O Configuration x8/x16 selectable by LB and UB pin.

y Three state outputs and TTL compatible

y Fully static operation

y Data retention supply voltage as low as 1.5V

POWER CONSUMPTION

POWER DISSIPATION

Operating

STANDBY

PRODUCT

FAMILY

OPERATING

PKG TYPE

(I_CCSB1, Max)

(I_CC, Max)

TEMPERATURE

V_CC=3.0V

1MHz

10MHz

9mA

f_Max.

BS616LV2019DC

BS616LV2019AC

BS616LV2019TC

BS616LV2019AI

BS616LV2019TI

DICE

Commercial

3.0uA

1.5mA

23mA

BGA-48-0608

TSOP I-48

BGA-48-0608

TSOP I-48

+0^OC to +70^OC

Industrial

5.0uA

2mA

10mA

25mA

-40^OC to +85^OC

PIN CONFIGURATIONS

BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

A16

A10

A11

A15

A14

A13

A12

GND

DQ15

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

Address

Input

1024

Memory Array

1024 x 2048

Row

Decoder

CE2

Buffer

BS616LV2019TC

BS616LV2019TI

2048

DQ0

Data

Column I/O

Input

Buffer

Write Driver

Sense Amp

GND

Data

Output

Buffer

128

Column Decoder

DQ15

CE2,CE

Address Input Buffer

Control

D10

D11

D12

D13

A16 A0 A1 A2 A3

V_CC

V_SS

VSS

VCC

D14

D15

A14

A12

VCC

VSS

A16

A15

A13

A10

A11

48-ball BGA top view

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

R0201-BS616LV2019

Revision

Oct.

1.4

2008

12 3 4 5 6 7...11

中文翻译

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与BS616LV2019_08相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2019AA-70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, BGA-48
BS616LV2019AAG70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, GREEN, BGA-48
BS616LV2019AC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019AC55	BSI	获取价格	Very Low Power CMOS SRAM 128K X 16 bit
BS616LV2019AC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019AC70	BSI	获取价格	Very Low Power CMOS SRAM 128K X 16 bit
BS616LV2019AC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019ACG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019ACG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019ACP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit

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