Datasheet > BS616LV2018AC

BS616LV2018AC

更新时间： 2024-01-10 09:46:40

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	221K
描述
Very Low Power/Voltage CMOS SRAM 128K X 16 bit

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中文翻译

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数据手册

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BS616LV2018AC 数据手册

Very Low Power/Voltage CMOS SRAM

128K X 16 bit

BSI

BS616LV2018

FEATURES

DESCRIPTION

• Very low operation voltage : 2.4 ~ 3.6V

• Very low power consumption :

The BS616LV2018 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits and

operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.1uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by active LOW chip

enable(CE), active LOW output enable(OE) and three-state output

drivers.

Vcc = 3.0V

C-grade: 16mA (Max.) operating current

I -grade: 20mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV2018 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV2018 is available in DICE form, JEDEC standard 48-pin

TSOP Type I package and 48-ball BGA package.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

PKG TYPE

, Max)

(I , Max)

CCSB1

TEMPERATURE

RANGE

Vcc=

Vcc=3.0V

3.0V

BS616LV2018DC

BS616LV2018TC

BS616LV2018AC

DICE

0 ^OC to +70 ^O

0.7 uA

TSOP1-48

16 mA

BGA-48-0608

2.4V ~3.6V

BS616LV2018DI

DICE

-40 ^OC to +85 ^O

1.5 uA

20 mA

BS616LV2018TI

BS616LV2018AI

TSOP1-48

BGA-48-0608

BLOCK DIAGRAM

PIN CONFIGURATIONS

A13

A15

Address

A16

1024

A14

N.C.

Input

Row

Memory Array

1024 x 2048

A12

Buffer

Decoder

D10

D11

D12

D13

2048

Data

VSS

VCC

N.C.

A14

A12

VCC

VSS

Column I/O

Input

DQ0

Buffer

Write Driver

Sense Amp

A16

A15

A13

A10

128

Data

D14

D15

N.C.

Output

Buffer

Column Decoder

DQ15

A11

N.C.

Control

Address Input Buffer

A11 A9 A3 A2 A1

48-ball BGA top view

A0 A10

Vcc

Gnd

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.0

April 2002

R0201-BS616LV2018

12 3 4 5 6 7...11

中文翻译

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与BS616LV2018AC相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2018AC55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48
BS616LV2018AC70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48
BS616LV2018ACG55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV2018ACG70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, MINIBGA-48
BS616LV2018ACP55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, MINIBGA-48
BS616LV2018ACP70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, MINIBGA-48
BS616LV2018AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2018AI55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48
BS616LV2018AI70	BSI	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48
BS616LV2018AIG55	BSI	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, MINIBGA-48

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