Datasheet > BR501L-G

BR501L-G

更新时间： 2024-02-16 16:08:09

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描述
Silicon Bridge Rectifiers

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技术参数
数据手册

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BR501L-G 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	400 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	50 A	最大重复峰值反向电压：	100 V
子类别：	Bridge Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

BR501L-G 数据手册

Silicon Bridge Rectifiers

BR5005L-G Thru. BR5010L-G

Reverse Voltage: 50 to 1000V

Forward Current: 50A

RoHS Device

BR-L

Features

-Plastic case with heatsink for heat dissipation.

-Surge overload -500 Amperes peak.

Metal Heat Sink

0.140(3.60)

0.120(3.05)

0.442(11.23)

0.424(10.77)

Mechanical Data

-Epoxy: U/L 94-V0 rate flame retardant.

0.052(1.30)DIA.

0.048(1.20)TYP.

1.134(28.80)

1.114(28.30)

-Case: Molded plastic with heatsink integrally,

mounted in the bridge encapsulation.

0.550(13.90)

MIN.

-Mounting position: Any

-Weight: 30 grams

0.220(5.60)

0.180(4.60)

-Terminals: Wire lead Ø 50mils.

0.748(19.00)

MIN.

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

BR5005L BR501L

BR502L

-G

BR504L

BR506L

-G

BR508L BR5010L

Symbol

Parameter

Unit

-G

800

560

800

-G

Maximum Peak Recurrent Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

VRRM

100

200

140

200

400

280

400

600

420

600

1000

700

VRMS

VDC

100

1000

Maximum Average Forward Current

(AV)

500

1.1

for Resistive Load

@T =55°C

Peak Forward Surage Current , 8.3ms Single

Half Sine-Wave Super Imposed On Rated Load

IFSM

Maximum Forward Voltage

Per Bridge Element at 25A Peak

@ TJ=25°C

Maximum Reverse Current at

Rate DC Blocking Voltage

μA

@ TJ=100°C

1000

Typical Thermal Resistance (FIG.3)

Operating Temperature Range

Storage Temperature Range

2.0

°C/W

°C

θJC

-55 to +150

TSTG

°C

REV:B

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Comchip Technology CO., LTD.

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