Datasheet > BR501W

BR501W

更新时间： 2024-02-04 19:35:12

品牌	Logo	应用领域
DCCOM		二极管
页数	文件大小	规格书
2页	428K
描述
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BR501W 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	400 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	50 A	最大重复峰值反向电压：	100 V
子类别：	Bridge Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

BR501W 数据手册

BR5005W

THRU

DC COMPONENTS CO., LTD.

RECTIFIER SPECIALISTS

BR5010W

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts

CURRENT - 50 Amperes

FEATURES

* Plastic case with heatsink for Maximum Heat Dissipation

* Surge overload ratings-400 Amperes

* Low forward voltage drop

BR-25W

METAL HEAT SINK

TYP

MECHANICAL DATA

* Case: Molded plastic with heatsink

* Epoxy: UL 94V-0 rate flame retardant

* Lead: MIL-STD-202E, Method 208 guaranteed

* Polarity: As marked

* Mounting position: Any

* Weight: 30 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

BR5005W BR501W BR502W BR504W BR506W BR508W BR5010W

SYMBOL

UNITS

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

RRM

RMS

100

200

140

400

280

600

420

800

560

1000

700

Volts

Maximum DC Blocking Voltage

100

200

400

600

800

1000

Volts

Maximum Average Forward Rectified Output Current at Tc = 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Amps

FSM

400

Amps

Volts

1.1

Maximum Forward Voltage Drop per element at 25A DC

= 25^oC

Maximum DC Reverse Current at Rated

uAmps

DC Blocking Voltage per element

I²t Rating for Fusing (t<8.3ms)

= 100^oC

500

I²t

664

300

2.0

A²Sec

⁰C/W

Typical Junction Capacitance ( Note1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

RθJ C

STG

-55 to + 150

⁰C

NOTES : 1.Measured at 1 MH

Z and applied reverse voltage of 4.0 volts

2. Thermal Resistance from Junction to Case per leg.

258

EXIT

BACK

下载PDF

与BR501W相关器件

型号	品牌	描述	获取价格	数据表
BR502	MIC	SINGLE-PHASE BRIDGE RECTIFIER	获取价格
BR502	DCCOM	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER	获取价格
BR502L	HY	Bridge Rectifier Diode,	获取价格
BR502L-G	COMCHIP	Silicon Bridge Rectifiers	获取价格
BR502W	DCCOM	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER	获取价格
BR504	DCCOM	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER	获取价格