Datasheet > BR25L020FVT-WE2

BR25L020FVT-WE2

更新时间： 2024-10-02 03:26:19

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
38页	1332K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8, ROHS COMPLIANT, TSSOP-8

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中文翻译

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BR25L020FVT-WE2 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

SPI BUS EEPROM

BR25Lxxx-W Series

(1K 2K 4K 8K 16K 32K 64K)

●General Description

BR25Lxxx-W series is a serial EEPROM of SPI BUS interface method.

●Features

●Packages W(Typ.) x D(Typ.) x H(Max.)

High speed clock action up to 5MHz (Max.)

Wait function by HOLD terminal

Part or whole of memory arrays settable as read

only memory area by program

1.8V to 5.5V single power source action most

suitable for battery use

Page write mode useful for initial value write at

factory shipment

DIP-T8

9.30mm x 6.50mm x 7.10mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

Highly reliable connection by Au pad and Au wire

For SPI bus interface

(CPOL, CPHA) = (0, 0), (1, 1)

Auto erase and auto end function at data rewrite

Low current consumption

SOP8

TSSOP-B8J

¾ At write action (5V) : 1.5mA (Typ.)

¾ At read action (5V) : 1.0mA (Typ.)

¾ At standby action (5V) : 0.1μA (Typ.)

Address auto increment function at read action

Write mistake prevention function

¾ Write prohibition at power on

¾ Write prohibition by command code (WRDI)

¾ Write prohibition by WP pin

5.00mm x 6.20mm x 1.71mm

3.00mm x 4.90mm x 1.10mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

MSOP8

2.90mm x 4.00mm x 0.90mm

¾ Write prohibition block setting by status

registers (BP1, BP0)

¾ Write mistake prevention function at low

voltage

Data at shipment Memory array : FFh, status

SSOP-B8

3.00mm x 6.40mm x 1.35mm

Data kept for 40 years

Data rewrite up to 1,000,000 times

●Page write

Number of

16Byte

32Byte

pages

BR25L080-W

BR25L160-W

BR25L320-W

BR25L640-W

BR25L010-W

BR25L020-W

BR25L040-W

Product

number

●BR25L Series

DIP-T8

SOP8

SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J

Power source

voltage

Capacity Bit format

Type

●

FVT

●

FVM

●

FVJ

●

1Kbit

2Kbit

128 X 8

256 X 8

512 X 8

1K X 8

2K X 8

4K X 8

8K X 8

BR25L010-W

BR25L020-W

BR25L040-W

BR25L080-W

BR25L160-W

BR25L320-W

BR25L640-W

1.8 ~ 5.5V

●

4Kbit

●

8Kbit

●

16Kbit

32Kbit

64Kbit

●

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R2R0G100350-1-2

22.JAN.2013 Rev.002

1/35

TSZ22111･14･001

12 3 4 5 6 7...38

中文翻译

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与BR25L020FVT-WE2相关器件

型号	品牌	获取价格	描述	数据表
BR25L020FV-W	ROHM	获取价格	SPI BUS 2Kbit (256 x 8bit) EEPROM
BR25L020FV-WE1	ROHM	获取价格	EEPROM Card, 256X8, Serial, CMOS, PDSO8,
BR25L020FV-WE2	ROHM	获取价格	High Reliability Serial EEPROMs SPI BUS Serial EEPROMs
BR25L020F-W	ROHM	获取价格	SPI BUS 2Kbit (256 x 8bit) EEPROM
BR25L020F-WE1	ROHM	获取价格	EEPROM Card, 256X8, Serial, CMOS, PDSO8
BR25L020F-WE2	ROHM	获取价格	High Reliability Serial EEPROMs SPI BUS Serial EEPROMs
BR25L020F-WTR	ROHM	获取价格	High Reliability Serial EEPROMs SPI BUS Serial EEPROMs
BR25L020-W	ROHM	获取价格	SPI BUS 2Kbit (256 x 8bit) EEPROM
BR25-L04	YANGJIE	获取价格	Bridge Rectifier
BR25L040FJ-W	ROHM	获取价格	SPI BUS 4Kbit (512 x 8bit) EEPROM

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