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BR25H0160F-WCE2 PDF预览

BR25H0160F-WCE2

更新时间: 2024-02-26 04:31:53
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 439K
描述
EEPROM, 2KX8, Serial, CMOS, PDSO8

BR25H0160F-WCE2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP, SOP8,.25Reach Compliance Code:compliant
风险等级:5.81数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:2048 words字数代码:2000
最高工作温度:125 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:3/5 V
认证状态:Not Qualified筛选级别:AEC-Q100
串行总线类型:SPI最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.003 mA
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
写保护:HARDWAREBase Number Matches:1

BR25H0160F-WCE2 数据手册

 浏览型号BR25H0160F-WCE2的Datasheet PDF文件第13页浏览型号BR25H0160F-WCE2的Datasheet PDF文件第14页浏览型号BR25H0160F-WCE2的Datasheet PDF文件第15页浏览型号BR25H0160F-WCE2的Datasheet PDF文件第17页浏览型号BR25H0160F-WCE2的Datasheet PDF文件第18页浏览型号BR25H0160F-WCE2的Datasheet PDF文件第19页 
Technical Note  
BR25H□□□-WC series  
Notes on power ON/OFF  
At power ON/OFF, set CSB “H” (=VCC).  
When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may  
cause malfunction, mistake write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all inputs  
are canceled.)  
Vcc  
Vcc  
GND  
Vcc  
CSB  
GND  
Good  
Bad  
example  
example  
Fig.61 CSB timing at power ON/OFF  
(Good example) CSB terminal is pulled up to VCC.  
At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition, the IC internal  
circuit may not be reset, which please note.  
(Bad example)  
CSB terminal is “L” at power ON/OFF.  
In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction, mistake write owing to noises  
and the likes.  
Even when CSB input is High-Z, the status becomes like this case, which please note.  
LVCC circuit  
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.  
At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite.  
P.O.R. circuit  
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable  
status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the  
recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to  
noises and the likes.  
Recommended conditions of tR, tOFF, Vbot  
tR  
Vcc  
tR  
tOFF  
Vbot  
tOFF  
Fig.62 Rise waveform  
10ms or below  
100ms or below  
10ms or higher  
10ms or higher  
0.3V or below  
0.2V or below  
Vbot  
0
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.08 - Rev.D  
16/19  

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