Datasheet > BQ4016_14

BQ4016_14

更新时间： 2024-02-20 04:41:49

品牌	Logo	应用领域
德州仪器 - TI		静态存储器
页数	文件大小	规格书
11页	860K
描述
1024Kx8 Nonvolatile SRAM

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中文翻译

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数据手册

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BQ4016_14 数据手册

bq4016/bq4016Y

1024Kx8 Nonvolatile SRAM

At t his tim e t he in tegr a l en er gy

Features

➤ Data retention in the absence of

General Description

source is switched on to sustain the

m em or y u n t il a ft er V_CCr et ur ns

valid.

The CMOS bq4016 is a nonvolatile

8,388,608-bit static RAM organized

as 1,048,576 words by 8 bits. The in-

tegral control circuitry and lithium

energy source provide reliable non-

volatility coupled with the unlimited

write cycles of standard SRAM.

power

➤ Automatic write-protection

during power-up/power-down

cycles

Th e bq4016 u ses extr em ely low

s t a n dby cu r r en t CMOS SRAMs,

coupled with a small lithium coin

cell to provide nonvolatility without

long write-cycle times and the write-

cycle lim it a tion s a ssocia ted with

EEPROM.

➤ Conventional SRAM operation;

unlimited write cycles

Th e con tr ol cir cu it r y con s ta n t ly

monitors the single 5V supply for an

out-of-tolerance condition. When V_CC

falls out of tolerance, the SRAM is

un condition ally wr ite-pr otected to

p r even t a n in a dver t en t w r it e

operation.

➤ 10-year minimum data retention

in absence of power

The bq4016 has the same interface

as industry-standard SRAMs and re-

quires no external circuitry.

➤ Battery internally isolated until

power is applied

Pin Connections

Pin Names

Block Diagram

A₀–A₁₉

Address inputs

DQ₀–DQ₇Data input/output

Chip enable input

Output enable input

Write enable input

+5 volt supply input

Ground

V_CC

V_SS

No connect

Selection Guide

Maximum

Access

Negative

Supply

Maximum

Access

Negative

Supply

Part

Number

Time (ns)

Tolerance

Number

Time (ns)

Tolerance

bq4016MC -70

bq4016YMC -70

-5%

-10%

Sept. 1996 B

12 3 4 5 6 7...11

中文翻译

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BQ4016MC-70	TI	获取价格	1024Kx8 Nonvolatile SRAM
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