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BP1A3M

更新时间: 2024-01-14 21:39:17
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管
页数 文件大小 规格书
6页 95K
描述
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

BP1A3M 数据手册

 浏览型号BP1A3M的Datasheet PDF文件第1页浏览型号BP1A3M的Datasheet PDF文件第2页浏览型号BP1A3M的Datasheet PDF文件第3页浏览型号BP1A3M的Datasheet PDF文件第5页浏览型号BP1A3M的Datasheet PDF文件第6页 
BP1 SERIES  
BP1L3N  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 22 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
hFE1Note 2  
hFE2Note 2  
hFE3Note 2  
VOLNote 2  
VILNote 2  
R1  
200  
100  
50  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 0.5 A  
VCE = 2.0 V, IC = 0.7 A  
VIN = 5.0 V, IC = 0.2 A  
VCE = 5.0 V, IC = 100 µA  
DC current gain  
DC current gain  
0.45  
0.3  
6.11  
13  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
3.29  
7
4.7  
10  
E-to-B resistance  
R2  
Note 2 PW 350 µs, duty cycle 2 %  
BP1A4M  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 22 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
hFE1Note 2  
hFE2Note 2  
hFE3Note 2  
VOLNote 2  
VILNote 2  
R1  
200  
100  
50  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 0.5 A  
VCE = 2.0 V, IC = 0.7 A  
VIN = 5.0 V, IC = 0.1 A  
VCE = 5.0 V, IC = 100 µA  
DC current gain  
DC current gain  
0.4  
0.3  
13  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
7
7
10  
10  
E-to-B resistance  
R2  
13  
Note 2 PW350 µs, duty cycle2 %  
4
Data Sheet D11740EJ2V0DS  

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