Datasheet > BL045N10TH

BL045N10TH

更新时间： 2024-04-09 19:00:42

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	602K
描述
137A, 100V, 178W, N Channel, Power MOSFETs

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BL045N10TH 数据手册

N-Channel Enhancement Mode MOSFET

BL045N10TH

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_GS= 0V, I_D= 1mA

V_DS= 100V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

V_GS= 10V,I_D= 100A

V_GS= 6V,I_D= 50A

V_DS= V_GS, I_D= 150μA

100

μA

mΩ

±1 00

4.5

7.4

3.7

R_DS(ON)

Static Drain-Source On-resistance ^*2

V_GS(th)

R_G

Gate Threshold Voltage

Gate resistance

2.9

2.6

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Input Capacitance

6998 8410

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

V_DS= 50V

f = 1.0MHz

892

1610

V_DD=50V

V_GS= 10V

R_G= 1.6Ω

I_D= 50A

t_d(OFF)

t_f

Turn-Off Delay Time

Turn-Off Fall Time

Gate charge characteristics

Q_G

Q_GS

Q_GD

Total Gate-Charge

105

36.1

24.6

V_DD= 50V

I_D= 100A

V_GS= 10V

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

I_SD

Diode Forward Voltage ^*3

Diode Continuous Forward Current ^*5

Diode Pulse current

I_SD= 10A, V_GS= 0V

T_C= 25°C

1.0

1.2

137

I_{SD, pulse}

t_rr

T_C= 25°C

548

Reverse recovery time

155

390

4.7

V_R=50V I_F= 30A,

di/dt=100A/us,

Q_rr

Reverse recovery charge

Reverse recovery current

I_RRM

Notes:

1. See fig.11

2. The data tested by surface mounted on suggest footprint

3. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

4. The E_ASdata shows Max. rating. The test condition is V_DD= 50V, V_GS= 10V, L = 1mH

5. The data is theoretically the same as I_Dand I_DM, in real applications, should be limited by total power dissipation

MTM0393A: October 2021

www.gmesemi.com

123 4 5

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