5秒后页面跳转
BGU8011 PDF预览

BGU8011

更新时间: 2024-03-03 10:10:35
品牌 Logo 应用领域
恩智浦 - NXP 全球定位系统
页数 文件大小 规格书
19页 325K
描述
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

BGU8011 数据手册

 浏览型号BGU8011的Datasheet PDF文件第1页浏览型号BGU8011的Datasheet PDF文件第2页浏览型号BGU8011的Datasheet PDF文件第4页浏览型号BGU8011的Datasheet PDF文件第5页浏览型号BGU8011的Datasheet PDF文件第6页浏览型号BGU8011的Datasheet PDF文件第7页 
BGU8011  
NXP Semiconductors  
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded  
under the worst probable conditions.  
Symbol  
VCC  
Parameter  
Conditions  
Min  
Max  
Unit  
V
[1]  
[1][2]  
supply voltage  
RF input AC coupled  
VI(ENABLE) < VCC + 0.6 V  
DC, VI(RF_IN) < VCC + 0.6 V  
DC, VI(RF_OUT) < VCC + 0.6 V  
1575 MHz  
0.5 +5.0  
0.5 +5.0  
0.5 +5.0  
0.5 +5.0  
VI(ENABLE)  
VI(RF_IN)  
VI(RF_OUT)  
Pi  
input voltage on pin ENABLE  
input voltage on pin RF_IN  
input voltage on pin RF_OUT  
input power  
V
[1][2][3]  
[1][2][3]  
[1]  
V
V
-
10  
55  
dBm  
mW  
Ptot  
total power dissipation  
storage temperature  
junction temperature  
Tsp 130 C  
-
Tstg  
65  
+150 C  
Tj  
-
-
150  
C  
VESD  
electrostatic discharge voltage Human Body Model (HBM) According to  
JEDEC standard JS-001-2010  
2  
kV  
Charged Device Model (CDM) According to  
JEDEC standard JESD22-C101C  
-
1  
kV  
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 1.  
[2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed VCC + 0.6 V and shall not exceed 5.0 V in order  
to avoid excess current.  
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.  
6. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Operating conditions  
Parameter  
Conditions  
Min Typ Max Unit  
1.5 3.1  
40 +25 +85 C  
supply voltage  
-
V
Tamb  
ambient temperature  
VI(ENABLE) input voltage on pin ENABLE  
OFF state  
ON state  
-
-
-
0.3  
-
V
V
0.8  
7. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
225  
Unit  
Rth(j-sp)  
thermal resistance from junction to solder point  
K/W  
BGU8011  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 1 — 14 May 2013  
3 of 19  

与BGU8011相关器件

型号 品牌 描述 获取价格 数据表
BGU8019 NXP SiGe:C Low-Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

获取价格

BGU8051 NXP Low noise high linearity amplifier

获取价格

BGU8052 NXP Low noise high linearity amplifier

获取价格

BGU8053 NXP Low noise high linearity amplifier

获取价格

BGU8061 NXP Low-noise high-linearity amplifier

获取价格

BGU8061J NXP LOW-NOISE HIGH-LINEARITY AMPLIFI

获取价格