Datasheet > BGD702N,112

BGD702N,112

更新时间： 2024-02-01 00:53:10

品牌	Logo	应用领域
恩智浦 - NXP		高功率电源射频微波
页数	文件大小	规格书
9页	66K
描述
BGD702N - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin

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技术参数
数据手册

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BGD702N,112 技术参数

生命周期：	Obsolete	零件包装代码：	SFM
包装说明：	SOT-115J	针数：	7
Reach Compliance Code：	unknown	HTS代码：	8542.33.00.01
风险等级：	5.7	其他特性：	LOW NOISE, HIGH RELIABILITY
特性阻抗：	75 Ω	构造：	MODULE
增益：	18.5 dB	最大工作频率：	750 MHz
最小工作频率：	40 MHz	最高工作温度：	100 °C
最低工作温度：	-20 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOT-115J	电源：	24 V
射频/微波设备类型：	WIDE BAND HIGH POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	435 mA	技术：	HYBRID
Base Number Matches：	1

BGD702N,112 数据手册

NXP Semiconductors

Product specification

750 MHz, 18.5 dB gain power doubler

amplifier

BGD702N

Table 3 Bandwidth 40 to 550 MHz; V_B= 24 V; T_mb= 35 C; Z_S= Z_L= 75 

SYMBOL

G_p

PARAMETER

power gain

CONDITIONS

f = 50 MHz

MIN.

MAX.

UNIT

f = 550 MHz

18.5

0.2



deg

S₁₁

slope cable equivalent

flatness of frequency response

input return losses

f = 40 to 550 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 550 MHz

f = 40 to 80 MHz

f = 80 to 160 MHz

f = 160 to 320 MHz

f = 320 to 550 MHz

f = 50 MHz

0.2



45



S₂₂

output return losses



S₂₁

phase response

+45

67

CTB

composite triple beat

77 channels flat;

V_o= 44 dBmV;

measured at 547.25 MHz

X_mod

CSO

cross modulation

77 channels flat;

V_o= 44 dBmV;

measured at 55.25 MHz



67

62

composite second order

distortion

77 channels flat;

V_o= 44 dBmV;

measured at 548.5 MHz

d₂

V_o

second order distortion

output voltage

note 1



72



d_im= 60 dB; note 2

see Table 1

note 3

64.5



dBmV

noise figure



I_tot

total current consumption (DC)



435

Notes

1. f_p= 55.25 MHz; V_p= 44 dBmV;

f_q= 493.25 MHz; V_q= 44 dBmV;

measured at f_p+ f_q= 548.5 MHz.

2. Measured according to DIN45004B:

f_p= 540.25 MHz; V_p= V_o;

f_q= 547.25 MHz; V_q= V_o6 dB;

f_r= 549.25 MHz; V_r= V_o6 dB;

measured at f_p+ f_q f_r= 538.25 MHz.

3. The module normally operates at V_B= 24 V, but is able to withstand supply transients up to 30 V.

2001 Nov 02

1 2 3 456 7 8 9

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