Datasheet > BFQ19SE6327BTSA1

BFQ19SE6327BTSA1

更新时间： 2024-01-16 20:06:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	507K
描述
RF Small Signal Bipolar Transistor,

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中文翻译

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数据手册

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BFQ19SE6327BTSA1 数据手册

BFQ19S

NPN Silicon RF Transistor*

• For low noise, low distortion broadband

amplifiers in antenna and

telecommunications systems up to 1.5 GHz

at collector currents from 10 mA to 70 mA

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFQ19S

Marking

Pin Configuration

2 = C 3 = E

Package

SOT89

1 = B

Maximum Ratings

Parameter

Symbol

Value

210

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

Base current

Total power dissipation

tot

T ≤ 85°C

150

- ... -

-65 ... 150

°C

Junction temperature

Operation junction temperature range

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 65

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

thJA

please refer to Application Note Thermal Resistance

2010-03-12

12 3 4 5 6

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