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BFQ19SH6359XTMA1 PDF预览

BFQ19SH6359XTMA1

更新时间: 2024-01-24 12:29:54
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
7页 547K
描述
RF Small Signal Bipolar Transistor, 0.21A I(C), 1-Element, L Band, Silicon, NPN, TO-243, ROHS COMPLIANT PACKAGE-3

BFQ19SH6359XTMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.66其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.21 A
基于收集器的最大容量:1.35 pF集电极-发射极最大电压:15 V
配置:SINGLE最高频带:L BAND
JEDEC-95代码:TO-243JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5500 MHz
Base Number Matches:1

BFQ19SH6359XTMA1 数据手册

 浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第2页浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第3页浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第4页浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第5页浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第6页浏览型号BFQ19SH6359XTMA1的Datasheet PDF文件第7页 
BFQ19S  
Low Noise Silicon Bipolar RF Transistor  
For low noise, low distortion broadband  
amplifiers in antenna and  
1
2
3
2
telecommunications systems up to 1.5 GHz  
at collector currents from 10 mA to 70 mA  
Pb-free (RoHS compliant) package  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFQ19S  
Marking  
FG  
Pin Configuration  
2 = C 3 = E  
Package  
SOT89  
1 = B  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
15  
20  
20  
3
120  
12  
1
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
W
I
C
Base current  
Total power dissipation  
I
B
1)  
P
tot  
T 85°C  
S
150  
-65 ... 150  
-65 ... 150  
°C  
Junction temperature  
Ambient temperature  
Storage temperature  
T
J
T
A
T
Stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
65  
Unit  
K/W  
2)  
R
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For the definition of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJS  
2014-04-03  
1

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