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BFG520W PDF预览

BFG520W

更新时间: 2024-01-13 03:09:45
品牌 Logo 应用领域
锦美电子 - JMNIC 开关光电二极管晶体管
页数 文件大小 规格书
16页 130K
描述
NPN 9 GHz wideband transistors

BFG520W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:LOW NOISE, HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):0.07 A配置:SINGLE
最小直流电流增益 (hFE):60最高频带:L BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

BFG520W 数据手册

 浏览型号BFG520W的Datasheet PDF文件第10页浏览型号BFG520W的Datasheet PDF文件第11页浏览型号BFG520W的Datasheet PDF文件第12页浏览型号BFG520W的Datasheet PDF文件第13页浏览型号BFG520W的Datasheet PDF文件第14页浏览型号BFG520W的Datasheet PDF文件第15页 
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Date of release: 1998 Oct 02  
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