5秒后页面跳转
BF494 PDF预览

BF494

更新时间: 2024-09-24 03:21:43
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管PC
页数 文件大小 规格书
3页 87K
描述
NPN RF Transistor

BF494 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:PLASTIC, TO-92, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.52Is Samacsys:N
最大集电极电流 (IC):0.03 A配置:SINGLE
最小直流电流增益 (hFE):67JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

BF494 数据手册

 浏览型号BF494的Datasheet PDF文件第2页浏览型号BF494的Datasheet PDF文件第3页 
July 2006  
BF494  
tm  
NPN RF Transistor  
TO-92  
1. Collector 2. Emitter 3. Base  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
20  
Unit  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
VCBO  
VEBO  
IC  
30  
5.0  
V
Collector Current - Continuous  
Junction Temperature  
30  
mA  
°C  
°C  
TJ  
150  
TSTG  
Storage Temperature Range  
- 55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Unit  
PD  
Total Device Dissipation, by RθJA  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
RθJC  
RθJA  
Thermal Resistance, Junction to case  
Thermal Resistance, Junction to Ambient  
125  
357  
°C/W  
°C/W  
Electrical Characteristics*  
T = 25°C unless otherwise noted  
C
Symbol  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICES  
Parameter  
Conditions  
IC = 1.0mA, IB = 0  
IC = 10µA, IE = 0  
Min.  
20  
Max.  
Units  
Collector-Emitter Breakdown Voltage  
Collector-Base BreakdownVoltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Current  
DC Current Gain  
V
V
30  
IE = 10µA, IC = 0  
5.0  
V
VCE = 40V, VEB = 0V  
VCE = 10V, IC = 1mA  
IC = 10mA, IB = 5mA  
IC = 10mA, IB = 5mA  
VCE = 10V, IC = 10mA  
10  
222  
0.2  
nA  
hFE  
67  
VCE(sat)  
VBE(sat)  
VBE(ON)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
0.92  
740  
650  
mV  
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BF494 Rev. A  
1
www.fairchildsemi.com  

BF494 替代型号

型号 品牌 替代类型 描述 数据表
BF494B CDIL

功能相似

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

与BF494相关器件

型号 品牌 获取价格 描述 数据表
BF494/B ETC

获取价格

TRANSISTOR BIPOLAR
BF494A CDIL

获取价格

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
BF494-AMMO NXP

获取价格

暂无描述
BF494B CDIL

获取价格

NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
BF494B NXP

获取价格

NPN medium frequency transistors
BF494B-AMMO NXP

获取价格

TRANSISTOR 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small
BF494B-T/R NXP

获取价格

TRANSISTOR 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small
BF494D26Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BF494D27Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BF494D74Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92