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BF259PBFREE PDF预览

BF259PBFREE

更新时间: 2024-10-05 19:46:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
5页 563K
描述
Small Signal Bipolar Transistor,

BF259PBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.73
Base Number Matches:1

BF259PBFREE 数据手册

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BF259  
www.centralsemi.com  
SILICON  
HIGH VOLTAGE  
NPN TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BF259 is a silicon  
NPN transistor designed for high voltage applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
30  
V
CBO  
CEO  
EBO  
V
V
25  
4.0  
V
V
Continuous Collector Current  
Power Dissipation  
I
25  
mA  
mW  
°C  
C
P
250  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
175  
J
stg  
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
30  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=250V  
MIN  
TYP  
MAX  
50  
UNITS  
nA  
I
V
CBO  
CB  
I =100µA  
BV  
BV  
BV  
300  
300  
5.0  
V
V
V
V
CBO  
CEO  
C
I =10mA  
C
I =100µA  
EBO  
E
V
I =30mA, I =6.0mA  
1.0  
CE(SAT)  
FE  
C
B
h
V
=10V, I =30mA  
25  
CE  
CE  
C
f
V
=10V, I =15mA  
90  
MHz  
T
C
R0 (21-May 2019)  

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