Datasheet > BDX88C

BDX88C

更新时间： 2024-09-17 06:41:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	111K
描述
Silicon PNP Power Transistors

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BDX88C 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BDX88C

DESCRIPTION

·With TO-3 package

·Complement to type BDX87C

·DARLINGTON

APPLICATIONS

·Designed for use in power linear and

switching application.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

-100

-5

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-12

I_CM

Collector current(peak)

Base current

-18

I_B

-0.2

P_T

Total power dissipation

Max. operating Junction temperature

Storage temperature

T_C=25ꢀ

120

ꢀ

T_j

200

T_stg

-65~200

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.45

ꢀ/W

12 3

中文翻译

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