生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.79 | 其他特性: | BUILT-IN BIAS RESISTOR |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 120 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 5000 ns | 最大开启时间(吨): | 1500 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BDS60-T | NXP |
获取价格 |
TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BDS61 | NXP |
获取价格 |
TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BDS61A | NXP |
获取价格 |
TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BDS61A-T | NXP |
获取价格 |
TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BDS61B | NXP |
获取价格 |
TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
BDS61B-T | NXP |
获取价格 |
TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
BDS61C | NXP |
获取价格 |
TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
BDS61C-T | NXP |
获取价格 |
TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
BDS61-T | NXP |
获取价格 |
TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BDS643 | PHILIPS |
获取价格 |
Transistor, |