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BDS60C-T PDF预览

BDS60C-T

更新时间: 2024-11-09 19:41:55
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
6页 140K
描述
TRANSISTOR 3000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BDS60C-T 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.79其他特性:BUILT-IN BIAS RESISTOR
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:120 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):5000 ns最大开启时间(吨):1500 ns
Base Number Matches:1

BDS60C-T 数据手册

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与BDS60C-T相关器件

型号 品牌 获取价格 描述 数据表
BDS60-T NXP

获取价格

TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
BDS61 NXP

获取价格

TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
BDS61A NXP

获取价格

TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
BDS61A-T NXP

获取价格

TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
BDS61B NXP

获取价格

TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig
BDS61B-T NXP

获取价格

TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig
BDS61C NXP

获取价格

TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig
BDS61C-T NXP

获取价格

TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig
BDS61-T NXP

获取价格

TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
BDS643 PHILIPS

获取价格

Transistor,