Datasheet > BD8LD650EFV-C (新产品)

BD8LD650EFV-C (新产品)

更新时间： 2023-09-03 20:25:06

品牌	Logo	应用领域
罗姆 - ROHM		开关过电流保护
页数	文件大小	规格书
51页	1946K
描述
BD8LD650EFV-C是一款适用于车载和工业设备的SPI输入8通道低边开关。该产品内置负载开路检测功能、输出接地故障检测功能、过电流保护功能、过热保护功能、有源钳位功能。

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Datasheet

Automotive IPD Series

8ch Low Side Switch

BD8LD650EFV-C

General Description

Key Specifications

BD8LD650EFV-C is an 8-channel SPI-input low side

switch for automotive and industrial application. It has

built-in open load detection function, short ground

detection function, over current protection function,

thermal shutdown function, and active clamp function.

◼ Input Voltage Range VDD:

◼ Input Voltage Range VDDIO:

◼ On State Resistance:

◼ Over Current Threshold Value:

◼ Active Clamp Energy:

4.0 V to 5.5 V

3.0 V to 5.5 V

650 mΩ (Typ)

0.5 A/1.0 A (Min)

125 mJ

◼ Operating Temperature Range Tj:-40 °C to +150 °C

Features

◼ AEC-Q100 Qualified^{(Note 1)}

Package

W (Typ) x D (Typ) x H (Max)

6.5 mm x 6.4 mm x 1.0 mm

◼ Monolithic Power Management IC with Control Block

(CMOS) and a Power MOSFET Mounted on a Single

Chip

HTSSOP-B20

◼ Channel Control/error can be Detected by 16 bit SPI

Commands.

◼ Built-in Open Load Detection Function (OLD)

◼ Built-in Short Ground Detection Function (SGD)

◼ Built-in Over Current Protection Function (OCP)

◼ Built-in Thermal Shutdown Function(TSD)

◼ Built-in Active Clamp Function

◼ Built-in Synchro Mode

◼ Built-in Limp Home Mode

◼ Surface-mount HTSSOP-B20 Packaging

(Note 1) Grade1

HTSSOP-B20

Application

◼ Driving Resistive and Inductive Load

Typical Application Circuit

V_DDIO

V_DD

V_BAT

C_VDDIO

C_VDD

VDDIO

VDD

OUT1

OUT2

OUT3

OUT4

OUT5

OUT6

OUT7

OUT8

I/O

Control Logic

R_IDLE

R_IN21

R_IN43

R_IN65

IDLE

IN21

IN43

IN65

UVLO

I/O

(IDLE, IN,

Limp Home)

Mode

Control

Control,

Diagnostic

and

protective

Functions

Limp

Home

OCP

TSD

MCU

Input

R_CSB

R_SCLK

R_SI

CSB

SCLK

UVLO

OLD

OFD

SGD

SPI

Control

Active

Clamp

I/O

(SPI)

Gate

Driver

Diagnosis

R_SO

C_OUT1C_OUT2

C_OUT3

C_OUT4

C_OUT5

C_OUT6

C_OUT7

C_OUT8

GND

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0G5G1G400140-1-2

26.Aug.2022 Rev.001

1/48

12 3 4 5 6 7...51

中文翻译

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