BD4LD650EFV-C
Absolute Maximum Ratings (Tj = 25 °C)
Parameter
Symbol
Rating
Unit
VDDIO, VDD Power Supply Voltage
Output Voltage (Power MOS Output)
Output Current (Power MOS Output)
Output Voltage (SPI)
VDDIO, VDD
VOUT1-4
-0.3 to +7
-0.3 to (Internal Limit)(Note 1)
(Internal Limit)(Note 2)
-0.3 to +7
V
V
IOUT1-4
A
VSO
V
Input Voltage (IDLE)
VIDLE
-0.3 to +7
V
Input Voltage (SPI)
VCSB, VSCLK, VSI
VIN1, VIN2, VIN3
Tstg
-0.3 to +7
V
Input Voltage (IN1, IN2, IN3)
Storage Temperature Range
Maximum Junction Temperature
-0.3 to +7
V
-55 to +150
°C
°C
Tjmax
150
Active Clamp Energy (Single Pulse)
EAS1-4(25 °C)
EAS1-4(150 °C)
ES, AS1-4(25 °C)
ES, AS1-4(150 °C)
EAR(125 °C)
125
20
57
19
12
9
mJ
mJ
mJ
mJ
mJ
mJ
Tj(START) = 25 °C, IOUT1-4(START) = 0.4 A
Active Clamp Energy (Single Pulse)(Note 3)
Tj(START) = 150 °C, IOUT1-4(START) = 0.4 A
Active Clamp Energy (Single Pulse)
Tj(START) = 25 °C, IOUT1-4(START) = 0.8 A, Synchro Mode
Active Clamp Energy (Single Pulse)(Note 3)
Tj(START) = 150 °C, IOUT1-4(START) = 0.8 A, Synchro Mode
Active Clamp Energy (Repetitive)(Note 3)(Note 4)
Tj(START) = 125 °C, IOUT(START) = 0.2 A
Active Clamp Energy (Repetitive)(Note 3)(Note 4)
Tj(START) = 125 °C, IOUT(START) = 0.4 A, Synchro Mode
(Note 1) Limited by the active clamp function.
ES, AR(125 °C)
(Note 2) Limited by the over current protection function. The over current detection value can be adjusted in two levels.
(Note 3) Not 100 % are tested.
(Note 4) 2M cycles, All channel input.
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Caution 3: When IC is turned off with an inductive load, reverse energy has to be dissipated in the IC. This energy can be calculated by the following equation:
1
푉퐵퐴푇
퐸퐿 = ꢀ퐼푂푈푇(푆푇퐴푅푇)ꢁ × ꢂ1 −
2
ꢃ
푉퐵퐴푇 − 푉푂푈푇(퐶퐿)
Where:
L is the inductance of the inductive load.
IOUT(START) is the output current at the time of turning off.
VOUT(CL) is the output clamp voltage.
The IC integrates the active clamp function to internally absorb the reverse energy EL which is generated when the inductive load is turned off.
When the active clamp operates, the thermal shutdown function does not work. Decide a load so that the reverse energy EL is active clamp
energy EAS (Figure 1.), ES,AS (Figure 2.) or under when inductive load is used.
10000
1000
100
10
10000
1000
100
10
Tj = 25 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
1
1
0.2
0.3
0.4
0.5
0.6
0.2
0.4
0.6
0.8
1.0
1.2
Output Current (Start): IOUT(START) [A]
Output Current (Start): IOUT(START) [A]
Figure 1. Active Clamp Energy (Single Pulse) vs
Output Current
Figure 2. Active Clamp Energy (Single Pulse)
Synchro Mode vs Output Current
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