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BD3539NUV-TR PDF预览

BD3539NUV-TR

更新时间: 2024-01-15 03:06:22
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管接口集成电路
页数 文件大小 规格书
12页 402K
描述
Terminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8

BD3539NUV-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:HVSON,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.03
差分输出:NO接口集成电路类型:BUS TERMINATOR SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-N8长度:3 mm
功能数量:1端子数量:8
最高工作温度:100 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1 mm最大供电电压:5.5 V
最小供电电压:2.7 V标称供电电压:3.3 V
表面贴装:YES温度等级:OTHER
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mmBase Number Matches:1

BD3539NUV-TR 数据手册

 浏览型号BD3539NUV-TR的Datasheet PDF文件第6页浏览型号BD3539NUV-TR的Datasheet PDF文件第7页浏览型号BD3539NUV-TR的Datasheet PDF文件第8页浏览型号BD3539NUV-TR的Datasheet PDF文件第10页浏览型号BD3539NUV-TR的Datasheet PDF文件第11页浏览型号BD3539NUV-TR的Datasheet PDF文件第12页 
Technical Note  
BD3539HFN, BD3539FVM, BD3539NUV  
Heat loss  
Thermal design must be conducted with the operation under the conditions listed below (which are the guaranteed  
temperature range requiring consideration on appropriate margins etc.):  
1. Ambient temperature Ta: 100°C or lower  
2. Chip junction temperature Tj: 150°C or lower  
The chip junction temperature Tj can be considered as follows. See Page 11/11 for θja.  
Most of heat loss in BD3539HFN/FVM/NUV occurs at the output N-channel FET. The power lost is determined by multiplying  
the voltage between VIN and Vo by the output current. As this IC employs the power PKG, the thermal derating  
characteristics significantly depends on the pc board conditions. When designing, care must be taken to the size of a pc  
board to be used.  
Power dissipation (W) = {Input voltage (VTT_IN) – Output voltage (VTT1/2VDDQ)}×Io (Ave)  
If VTT_IN = 1.5 volts, VDDQ=1.5 volts, and Io (Ave)=0.5 A,  
for instance, the power dissipation is determined as follows:  
Power dissipation (W) = {1.5 (V) – 0.75 (V)} × 0.5 (A) = 0.375 (W)  
POWER DISSIPATION  
HSON8  
MSOP8  
[mW]  
500  
[W]  
2.5  
437.5mW  
(1) 1layer boardcopper foil density : 65%)  
θja=71.4/W  
With no heat sink  
θja=286/W  
2.0  
400  
300  
200  
(2) 1layercopper foil density : 7%)  
(1) 1.75W  
θja=92.4/W  
(3) 1layercopper foil density : 0.2%)  
θja=198.4/W  
(2) 1.35W  
1.5  
1.0  
(3) 0.63W  
0.5  
0
100  
0
0
25  
50  
75  
100  
125 150  
0
25  
50  
75  
100  
125  
150  
[]  
[]  
Ambient Temperature [Ta]  
Ambient Temperature [Ta]  
VSON008V2030  
[W]  
2.0  
(1) 1.79W  
(1) 4layers boardSurface copper foil area : 5505mm2)  
,copper foil in each layer,θja=69.8/W  
(2) 4layers boardSurface copper foil area : 6.28mm2)  
1.5  
,copper foil in each layer, θja=70.6/W  
(2) 1.77W  
(3) 1layer board  
θja=202.9/W  
(4) With no heat sink  
1.0  
θja=463/W  
(3) 0.62W  
0.5  
(4) 0.27W  
0
0
25  
50  
75  
100  
125 150  
[]  
Ambient Temperature [Ta]  
www.rohm.com  
2009.04 - Rev.B  
9/11  
© 2009 ROHM Co., Ltd. All rights reserved.  

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