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BD17516STU PDF预览

BD17516STU

更新时间: 2024-02-26 17:05:26
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER /
页数 文件大小 规格书
8页 801K
描述
3A, 45V, NPN, Si, POWER TRANSISTOR, TO-126

BD17516STU 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:19 weeks
风险等级:1.78最大集电极电流 (IC):3 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz

BD17516STU 数据手册

 浏览型号BD17516STU的Datasheet PDF文件第1页浏览型号BD17516STU的Datasheet PDF文件第2页浏览型号BD17516STU的Datasheet PDF文件第4页浏览型号BD17516STU的Datasheet PDF文件第5页浏览型号BD17516STU的Datasheet PDF文件第6页浏览型号BD17516STU的Datasheet PDF文件第7页 
Typical Characteristics  
10  
1000  
100  
10  
VCE = 2V  
IC = 10 IB  
VBE(sat)  
VCE(sat)  
1
0.1  
0.01  
0.1  
1
0.01  
1
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
40  
35  
30  
25  
20  
15  
10  
5
10  
IC MAX. (Pulsed)  
10µs  
IC MAX. (Continuous)  
1
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Safe Operating Area  
Figure 4. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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