是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.25 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD17610 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD176-10 | FAIRCHILD |
获取价格 |
3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 | |
BD17610STU | ROCHESTER |
获取价格 |
3A, 45V, PNP, Si, POWER TRANSISTOR, TO-126 | |
BD17610STU | FAIRCHILD |
获取价格 |
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD17610STU | ONSEMI |
获取价格 |
PNP外延硅晶体管 | |
BD176-16 | FAIRCHILD |
获取价格 |
3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 | |
BD176-6 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD176-6 | FAIRCHILD |
获取价格 |
3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126 | |
BD176LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD177 | ISC |
获取价格 |
Silicon NPN Power Transistors |